Proceedings ArticleDOI
Non-destructive image sensor
Tadahiro Ohmi,T. Tamamushi,Jun-ichi Nishizawa +2 more
- pp 350-354
TLDR
In this article, a non-destructive read-out imaging device with high sensitivity and wide dynamic range is proposed. But the readout voltage is almost independent of the storage capacitance due to the existence of the floating n+p contact and the bit line capacitance.Abstract:
New imaging device characterized by non-destructive read-out operation is discussed theoretically concentrating on an optical sensing process and a read-out process. The light information is continuously stored in this imaging device even during the read-out process. It has been demonstrated theoretically that the stored voltage is almost independent of the storage capacitance due to the existence of the floating n+p contact and that the read-out voltage is almost independent of the bit line capacitance. The new imaging device has excellent features such as non-destructive characteristic, high sensitivity and wide dynamic range.read more
Citations
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Journal ArticleDOI
Nondestructive readout mode static induction transistor (SIT) photo sensors
TL;DR: In this article, the non-destructive readout (NDRO) performance of two static induction transistor (SIT) photosensors, a 40*40 pixel area array and a 140b linear array, is examined.
Patent
Solid state image sensor with signal amplification
TL;DR: In this article, a photoelectric transducer formed in the thickness direction of the semiconductor substrate is used to store the holes generated by incident light in the transducing part, and electrons of a number as many as m-times of the number of stored holes are read out from the substrate to the vertical BCCD.
References
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Journal ArticleDOI
Field-effect transistor versus analog transistor (static induction transistor)
TL;DR: The Static Induction Transistor (SIT) as discussed by the authors is a transistor similar to that of the vacuum tube triode type that exhibits the nonsaturated build-up character only when the internal negative feedback action is as little as G{m'} \simeq G_{m}.
Journal ArticleDOI
Charge coupled 8‐bit shift register
TL;DR: In this article, an 8-bit shift register based on the charge-coupled device concept was developed, which is essentially that of a linear array of 26 closely spaced MOS capacitors with a p-n junction at either end.
Journal ArticleDOI
Characteristics of static induction transistors: Effects of series resistance
TL;DR: In this article, the I-V characteristics of a static induction transistor (SIT) and their temperature dependence are established experimentally, and they are consistent with a major current transport mechanism of majority-carrier injection control plus the effect of series channel resistance.
Journal ArticleDOI
Punching through device and its integration—Static induction transistor
TL;DR: In this article, a bipolar mode SIT (BSIT) was proposed to improve the switching speed of SIT in the forward gate bias operation, which is called bipolar mode BSIT, and the drain voltage for the onset of current saturation was lower than that of the bipolar transistor.
Journal ArticleDOI
Static induction transistor image sensors
TL;DR: In this paper, two operational modes of static induction transistor (SIT) image sensors are described, i.e., electron-accumulation mode and electron-depletion mode.