Journal ArticleDOI
Numerical Prediction of the Influence of Process Parameters on Large Area Diamond Deposition by DC Arcjet with ARC Roots Rotating and Operating at Gas Recycling Mode
TLDR
In this paper, a computer model has been set up for simulation of the flow and temperature field, and the radial distribution of atomic hydrogen and active carbonaceous species over a large area substrate surface for a new type dc arc plasma torch with rotating arc roots and operating at gas recycling mode.Abstract:
A computer model have been set up for simulation of the flow and temperature field, and the radial distribution of atomic hydrogen and active carbonaceous species over a large area substrate surface for a new type dc arc plasma torch with rotating arc roots and operating at gas recycling mode A gas recycling radio of 90% was assumed. In numerical calculation of plasma chemistry, the Thermal-Calc program and a powerful thermodynamic database were employed. Numerical calculations to the computer model were performed using boundary conditions close to the experimental setup for large area diamond films deposition. The results showed that the flow and temperature field over substrate surface of Φ60-100mm were smooth and uniform. Calculations were also made with plasma of the same geometry but no arc roots rotation. It was clearly demonstrated that the design of rotating arc roots was advantageous for high quality uniform deposition of large area diamond films. Theoretical predictions on growth rate and film quality as well as their radial uniformity, and the influence of process parameters on large area diamond deposition were discussed in detail based on the spatial distribution of atomic hydrogen and the carbonaceous species in the plasma over the substrate surface obtained from thermodynamic calculations of plasma chemistry, and were compared with experimental observations.read more
Citations
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OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system
TL;DR: In this article, the authors used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes.
Journal ArticleDOI
High-rate homoepitaxial growth of CVD single crystal diamond by dc arc plasma jet at blow-down (open cycle) mode
TL;DR: In this paper, it was demonstrated that relatively high quality single crystal diamond layer with the FWHM of the diamond Raman peak of less than 2 cm−1 and the FWCM of diamond reflection X-ray Rocking Curve of 0.028° can be obtained by the 20kW dc arc plasma jet operating at blow down (open cycle) mode at a growth rate as high as 36μm/h.
Journal ArticleDOI
Argon-to-hydrogen ratio in plasma jet diamond chemical vapour deposition
TL;DR: In this article, computer modeling was used to predict the mole fraction of C, C 2 H 2, C 2H and C 2 radicals along the substrate radial distance at three different argon-to-hydrogen ratio (AHR) values.
Journal ArticleDOI
Influence of plasma power over growth rate and grain size during diamond deposition using DC arc plasma jet CVD
TL;DR: In this article, computer-aided mathematical calculations, simulating the mole fractions of C, C2H2, C 2H and C 2 species, which are found present in the plasma during diamond growth along the substrate radial length have been presented.
Journal ArticleDOI
In situ observation of nucleation by optical emission spectra in CVD diamond
TL;DR: In this paper, optical emission spectroscopy (OES) was used to in situ detect the intensity variation of C 2 radical with the deposition time in the boundary layer during homo-nucleation of CVD diamond by DC Arcjet Plasma.
References
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Journal ArticleDOI
Methyl versus acetylene as diamond growth species
TL;DR: In this article, the authors have modeled diamond growth on substrates placed in a high velocity 1-dimensional flow of partially dissociated hydrogen gas at 800 °C and showed that diamond is formed only near the injector.
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Atomic carbon vapor as a diamond growth precursor in thermal plasmas
TL;DR: In this article, a detailed surface chemistry mechanism is proposed for chemical vapor deposition of diamond films, which extends the growth-by-methyl mechanism proposed by Harris to treat any CHm radical, m=0−3, as a growth monomer.
Journal ArticleDOI
A theoretical study of the energetics of insertion of dicarbon (C2) and vinylidene into methane CH bonds
TL;DR: In this article, the insertion of dicarbon (C 2 ) and vinylidene into methane CH bonds was studied using ab initio molecular orbital theory, and the results of this study suggest that reaction of C 2 with a diamond surface should be favorable energetically with small activation barriers.
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CH3 detection in a low-density supersonic arcjet plasma during diamond synthesis
Michael H. Loh,Mark A. Cappelli +1 more
TL;DR: In this article, the minimum detectable CH3 density is found to be ∼4×1013 cm−3, which corresponds to a fractional absorption of 2×10−3 at a gas temperature of 1200 K.