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Journal ArticleDOI

On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors

H. Gajewski
- 01 Jan 1985 - 
- Vol. 65, Iss: 2, pp 101-108
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TLDR
In this article, the existence and uniqueness of temporally global solutions of the basic equations for the carrier transport in semiconductors are proved and sufficient conditions for the convergence of transit carrier distributions to thermal equilibrium and quasi-equilibrium distributions are formulated.
Abstract
Existence and uniqueness of temporally global solutions of the basic equations for the carrier transport in semiconductors are proved. Moreover, sufficient conditions for the convergence of transit carrier distributions to thermal equilibrium and quasi-equilibrium distributions are formulated. Es werden Existenz und Einzigkeit zeitlich globaler Losungen der Grundgleichungen fur den Ladungstragertransport in Halbleitern bewiesen. Zudem werden hinreichende Bedingungen fur die Konvergenz instationarer Ladungsverteilungen gegen thermodynamische Gleichgewichts- und Quasigleichgewichtsverteilungen formuliert.

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Journal ArticleDOI

On convex sobolev inequalities and the rate of convergence to equilibrium for fokker-planck type equations

TL;DR: In this paper, an elementary derivation of Bakry-Emery type conditions, results concerning perturbations of invariant measures with general admissible entropies, sharpness of convex Sobolev inequalities, applications to non-symmetric linear and certain non-linear Fokker-Planck type equations (Desai-Zwanzig model, drift-diffusion-Poisson model).
Journal ArticleDOI

On the basic equations for carrier transport in semiconductors

TL;DR: Etude analytique du problems de valeur aux limites for un systeme d'equations aux derivees partielles decrivant le transport des porteurs de charge dans un semiconducteur.
Journal ArticleDOI

Semiconductor device modelling from the numerical point of view

TL;DR: In this paper, mathematical and computational aspects of device modelling are treated, including the analytical model, discretizations, non-linear and linear systems of equations, and properties of the matrices involved are presented in a systematic way.
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