Journal ArticleDOI
On the growth of ZnSe on (100) GaAs by atmospheric pressure movpe
Guanghan Fan,J.O. Williams +1 more
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In this article, a single crystalline, low resistivity ZnSe has been grown on (100) GaAs by atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) using dimethylzinc and hydrogen selenide as reagents.About:
This article is published in Materials Letters.The article was published on 1985-08-01. It has received 16 citations till now. The article focuses on the topics: Metalorganic vapour phase epitaxy & Dimethylzinc.read more
Citations
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Journal ArticleDOI
Metalorganic precursors for vapour phase epitaxy
TL;DR: In this article, the use of metalorganic compounds in a variety of MOVPE and CBE applications is reviewed with emphasis on precursor chemistry in the gas phase and at the growth surface.
Journal ArticleDOI
Synthesis, characterization and x-ray crystal structures of asymmetric bis(dialkyldithiocarbamates) of zinc: Potential precursors for ZnS deposition
TL;DR: In this paper, four new bis(dialkyldithiocarbamates) of zinc, [Zn(S2CNMeR)2]2 (where R = Et, Prn, Pri and Bun) have been synthesized and characterized by X-ray crystallography, spectroscopic methods and differential scanning calorimetry.
Journal ArticleDOI
The MOCVD growth without prereaction of ZnSe and ZnS layers
Peter J. Wright,Peter J. Parbrook,B. Cockayne,Anthony C. Jones,E.D. Orrell,K.P. O'Donnell,Brian Henderson +6 more
TL;DR: In this paper, it was shown that the liquid adduct dimethylzinc-triethylamine (Me 2 Zn(NEt 3 ) 2 ) can be used as the zinc source to grow at low temperatures single crystal layers by MOCVD without any significant prereaction of the constituent reactants.
Journal ArticleDOI
MOCVD layer growth of ZnSe using a new zinc source
TL;DR: In this article, it was shown that the adduct dimethyl zinc (1,4-dioxan) can be used successfully as the zinc source in reaction with hydrogen selenide to grow single crystal layers of ZnSe on to (100) GaAs substrates by MOCVD in the temperature range 200-500 °C.
Journal ArticleDOI
The evaluation of bond dissociation energies for simple selenium-containing molecules using ab initio and density functional methods
TL;DR: In this article, the S-H and C-S bond dissociation energies for simple alkylthiols and dialkylsulphides, along with the S−S-S-Bond dissociation energy for dimethyl disulphide, compounds which have been used in the metal-organic chemical vapour deposition (MOCVD) growth of wide band gap II-VI (12-16) Zn- and Cd-based compound semiconductors, have been computed using the ab initio (ROHF and MP2)
References
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Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials II . II – VI Compounds
H. M. Manasevit,W. I. Simpson +1 more
Journal ArticleDOI
The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure
Peter J. Wright,B. Cockayne +1 more
TL;DR: In this paper, it was shown that thin film single crystal layers of ZnS, ZnSe and ZnSE x Se 1-x can be grown on a variety of substrates by direct reaction at atmospheric pressure, of dimethyl zinc, hydrogen sulphide and/or hydrogen selenide, using hydrogen as the carrier gas.
Journal ArticleDOI
Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor deposition
TL;DR: In this article, the merits of the OM-CVD process and compares the results obtained so far with those on ZnSe crystals or epitaxial layers prepared by other methods are discussed.
Journal ArticleDOI
Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
TL;DR: In this article, a smooth epitaxial single-crystalline layers of (100) ZnSe on GaAs substrates are grown by a new low-pressure low-temperature organometallic chemical vapor deposition process.
Journal ArticleDOI
Characterization of ZnSe grown by molecular-beam epitaxy
TL;DR: In this paper, extensive characterizations of nominally undoped, Ga-doped, and P-Doped ZnSe grown on (001)GaAs substrate have been made, and the free exciton emission line split into two lines due to the residual strain.
Related Papers (5)
The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure
Peter J. Wright,B. Cockayne +1 more