Journal ArticleDOI
On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor
TLDR
In this paper, a simple model, incorporating this lateral effect, permits direct separation of surface-controlled from bulk-controlled generation components, which can therefore appear as an apparent degradation of the bulk lifetime.Abstract:
A significant component of reverse current can occur due to lateral surface depletion effects in pulsed MOS capacitor experiments. This component of surface current is approximately proportional to the space-charge region width and can therefore appear as an apparent degradation of the bulk lifetime. A simple model, incorporating this lateral effect, permits direct separation of surface-controlled from bulk-controlled generation components.read more
Citations
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Journal ArticleDOI
Interpretation of surface and bulk effects using the pulsed MIS capacitor
D.K. Schroder,J. Guldberg +1 more
TL;DR: In this article, the effect of surface generation on the C-t response and Zerbst plot is demonstrated and values for s0 are correlated with the density of fast surface states.
Journal ArticleDOI
The electrical characterisation of semiconductors
TL;DR: In this paper, a review of measurement techniques for determining the electrical properties of semiconductors, especially silicon and the III-V compounds, is presented, at a time for continuing innovation in this area, to indicate present trends and material problems which may arise in the near future.
Journal ArticleDOI
A linear-sweep MOS-C technique for determining minority carrier lifetimes
TL;DR: A nonpulse MOS-C τ 0 measurement procedure, based upon the capacitance-voltage characteristics derived in response to a linear voltage sweep initiated and maintained under inversion biases, is described, analyzed, and illustrated in this paper.
Journal ArticleDOI
Leakage studies in high-density dynamic MOS memory devices
TL;DR: In this article, the authors present an in-depth study of leakage sources in dynamic MOS memories and show that the leakage is due to the transition region of gate-to-field oxide overlapped by the gate.
References
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Journal ArticleDOI
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
A.S. Grove,D.J. Fitzgerald +1 more
TL;DR: In this article, the surface space-charge region associated with a p-n junction is studied theoretically and experimentally, and the theory of MOS structures is extended to the case where the surface-space charge region is not in equilibrium, which is demonstrated by capacitance and conductance measurements performed on gate-controlled planar silicon diodes.
Journal ArticleDOI
On the determination of minority carrier lifetime from the transient response of an MOS capacitor
TL;DR: In this paper, the transient response of the MOS capacitance after the application of a large depleting voltage has been used to determine the minority carrier lifetime for silicon at room temperature.
Journal ArticleDOI
Measurements of the recombination velocity at germanium surfaces
Journal ArticleDOI
Minority carrier lifetime determination from inversion layer transient response
TL;DR: In this paper, a simple method for determining the minority carrier lifetime using the small signal response time of an inversion layer in an MOS capacitor was described, where only a single charge transport electrometer measurement and the oxide thickness are required to compute this lifetime.
Journal ArticleDOI
Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance method
C. Jund,R. Poirier +1 more
TL;DR: In this paper, a method to determine the carrier concentration and the minority carrier lifetime in semiconductor epitaxial layers is described, which implies the use of a MOS capacitance realised on the epitaxia layer.
Related Papers (5)
On the determination of minority carrier lifetime from the transient response of an MOS capacitor
Interpretation of surface and bulk effects using the pulsed MIS capacitor
D.K. Schroder,J. Guldberg +1 more