Journal ArticleDOI
Optical Properties of n-Type InP
TLDR
In this article, the intrinsic absorption edge of $n$-type InP at 77\ifmmode^\circ\else\textdegree\fi{}K and 300\ifmode^''circ\decrease\text degree\fi {}K are reported.Abstract:
Measurements of the intrinsic absorption edge of $n$-type InP at 77\ifmmode^\circ\else\textdegree\fi{}K and 300\ifmmode^\circ\else\textdegree\fi{}K are reported. Differences are found in the spectra of samples of differing origin. The effects are believed due to impurities. Reflection and absorption spectra in the vicinity of the reststrahlen peak are shown. The reststrahlen wavelength is 30.5 \ensuremath{\mu}, the static and high-frequency dielectric constants are ${\ensuremath{\epsilon}}_{0}=15$ and ${\ensuremath{\epsilon}}_{\ensuremath{\infty}}=10.6$. Freecarrier absorption and reflection spectra are shown. A brief discussion of the implications of the various optical and electrical measurements as regards the conduction band structure is given.read more
Citations
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Journal ArticleDOI
Electron mobility and free‐carrier absorption in InP; determination of the compensation ratio
Wladek Walukiewicz,Jacek Lagowski,L. Jastrzebski,P. Rava,M. Lichtensteiger,C. H. Gatos,Harry C. Gatos +6 more
TL;DR: In this article, the experimental dependence of electron mobility and free-carrier absorption on temperature and/or on carrier concentration can be consistently explained only when the effect of compensation is quantitatively taken into account.
Journal ArticleDOI
Band-to-Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)
Journal ArticleDOI
Band Structure of the Intermetallic Semiconductors from Pressure Experiments
TL;DR: In this paper, the authors considered three types of conduction band extrema in the (000), (100), and (111) directions in k space, and the correlation of unique pressure coefficients with specific band edges was examined, showing that pressure experiments can be planned to show up details of the band structure unavailable for study at atmospheric pressure.
Journal ArticleDOI
Exciton Absorption and Emission in InP
TL;DR: In this article, the intrinsic optical-absorption-coefficient data for undoped indium phosphide at 6, 20, and 77\ifmmode^\circ\else\text degree\fi{}K were analyzed.
Journal ArticleDOI
Performance of In x Ga 1-x As y P 1-y photodiodes with dark current limited by diffusion, generation recombination, and tunneling
TL;DR: In this article, the effects of diffusion, generation-recombination (GR), and the recently observed tunneling currents on the performance of photodiodes made from In 0.73 Ga 0.27 As 0.63 P 0.37 and 0.53 ga 0.47 As.
References
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
Journal ArticleDOI
Determination of Optical Constants and Carrier Effective Mass of Semiconductors
W. G. Spitzer,H. Y. Fan +1 more
TL;DR: In this article, the effect of free carriers on the optical constants has been determined by using reflectivity and absorption measurements in the region 5 to 35 micron, and the significance of ${m}_{s}$ is considered for four different types of energy band structure.
Journal ArticleDOI
Electron scattering in InSb
TL;DR: In this article, the effects of electron scattering by acoustical and optical phonons as well as electron-hole scattering on the mobility and thermoelectric power of intrinsic InSb were investigated.
Journal ArticleDOI
The Theory of Electronic Conduction in Polar Semi-Conductors
D. J. Howarth,E. H. Sondheimer +1 more
TL;DR: In this article, the Boltzmann equation for conduction electrons in a crystal was solved by means of a variational method, and exact expressions for the electrical conductivity and the thermo-electric power were obtained in the form of ratios of infinite determinants.
Journal ArticleDOI
Energy Levels of a Disordered Alloy
TL;DR: In this paper, a study of the one-electron energy levels of disordered alloys by means of perturbation theory is made, extending the results of Nordheim and Muto.
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