Phase Transition on Surface of IV Group Semiconductors by Laser Radiation

TLDR: In this article, it was found that row of nanostructures arises on the irradiated surface of p-Si single crystal after irradiation by YAG:Nd second harmonic.

Abstract: Analysis of a reordering of Ge amorphous surface by ruby laser; kinetics of the surface annealing after ion implantation using the optical reflectivity; occurrence laser induced periodical structures; nanohills formation by YAG:Nd laser allowed us to resume common features for these process which belong to thermogradient effect, too. Experimental data on annealing of p-Si (111) and i-Ge (111) mechanically polished surfaces by YAG:Nd laser radiation using of optical and atomic force microscopes optical reflectivity of He-Ne laser and the four-probe method confirmed a main role of termogradient effect in the process reordering of the mechanically damaged surface of Si and Ge single crystal. It was found that row of nanostructures arises on the irradiated surface of p-Si single crystal after irradiation by YAG:Nd second harmonic. For explanation this effect gathering of interstitial atoms at the irradiated surface is proposed.