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Reference EntryDOI

Photoluminescence in Analysis of Surfaces and Interfaces

TLDR
In this paper, the authors used photoluminescence (PL) spectroscopy to characterize a variety of material parameters, such as surface, interface, and impurity levels and gauge alloy disorder and interface roughness.
Abstract
Photoluminescence (PL) is the spontaneous emission of light from a material under optical excitation. The excitation energy and intensity are chosen to probe different regions and excitation concentrations in the sample. PL investigations can be used to characterize a variety of material parameters. PL spectroscopy provides electrical (as opposed to mechanical) characterization, and it is a selective and extremely sensitive probe of discrete electronic states. Features of the emission spectrum can be used to identify surface, interface, and impurity levels and to gauge alloy disorder and interface roughness. The intensity of the PL signal provides information on the quality of surfaces and interfaces. Under pulsed excitation, the transient PLintensity yields the lifetime of nonequilibrium interface and bulk states. Variation of the PL intensity under an applied bias can be used to map the electric field at the surface of a sample. In addition, thermally activated processes cause changes in PL intensity with temperature. PL analysis is nondestructive. Indeed, the technique requires very little sample manipulation or environmental control. Because the sample is excited optically, electrical contacts and junctions are unnecessary and high-resistivity materials pose no practical difficulty. In addition, time-resolved PL can be very fast, making it useful for characterizing the most rapid processes in a material. The fundamental limitation of PL analysis is its reliance on radiative events. Materials with poor radiative efficiency, such as low-quality indirect bandgap semiconductors, are difficult to study via ordinary PL. Similarly, identification of impurity and defect states depends on their optical activity. Although PL is a very sensitive probe of radiative levels, one must rely on secondary evidence to study states that couple weakly with light.

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References
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Journal ArticleDOI

Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

TL;DR: In this article, the authors examined the optoelectronic properties of Ga0.5In 0.5P/GaAs double heterostructures grown by organometallic chemical vapor deposition.
Journal ArticleDOI

Recombination lifetime of In0.53Ga0.47As as a function of doping density

TL;DR: In this article, the authors have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2 ×1019 cm−3.
Journal ArticleDOI

Chemical studies of the passivation of GaAs surface recombination using sulfides and thiols

TL;DR: In this article, the steady-state photoluminescence of (100)-oriented GaAs has been studied using x-ray photoelectron spectroscopy and steadystate photodynamic properties of GaAs surfaces exposed to inorganic and organic donors.
Journal ArticleDOI

Photoluminescence study of the interface in type II InAlAs–InP heterostructures

TL;DR: In this article, a new transition scheme was proposed based on the results of injection-dependent energy, lifetime and polarization of radiative recombinations (type II) in InAlAs-InP heterostructures grown by gas source molecular beam epitaxy.
Journal ArticleDOI

Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenide

K. Mettler
- 01 Jan 1977 - 
TL;DR: The electronic surface parameters of GaAs have been determined from a qualitative and quantitative analysis of the relative photoluminescence intensity at 300 K as mentioned in this paper, where a density of charged surface states of about 1012 cm−2 and a band bending of 0.59 eV have been found forn-type material with an electron concentration of 1.1×1017 cm−3.