Journal ArticleDOI
Photovoltaic effect and space charge capacitance of amorphous semiconductor-metal contacts
Horng-Yhi Wey,H. Fritzsche +1 more
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In this paper, the photovoltage region of contacts to amorphous semiconductors was studied by measuring at various temperatures (e.g., light intensity and wavelength) and the space charge capacitance as a function of frequency.Abstract:
The space charge region of contacts to amorphous semiconductors were studied by measuring at various temperatures (i) the photovoltage as a function of light intensity and wavelength and (ii) the space charge capacitance as a function of frequency. Semitransparent electrodes of Au, Sb, Al, SnO 2 , and nichrome were used. For all except Sb the illuminated metal electrode has negative polarity. The photovoltage incrases first linearly with photon flux and then logarithmically. Capacitance measurements suggest the presence of “blocking” barriers for holes. The width is about several hundred Angstrom. The chalcogenide alloy used was Ge 16 As 35 Te 28 S 21 .read more
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Journal ArticleDOI
Amorphous silicon p‐n junction
TL;DR: In this article, the preparation of an all-amorphous thin-film pn junction was described, where the aSi films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities.
Journal ArticleDOI
Solar cell materials and their basic parameters
TL;DR: In this article, the authors reviewed and tabulated the illumination conditions of currently known photovoltaic diodes, followed by some critical comments, such as energy gap, open circuit voltage, short circuit current density, fill factor, antireflection coating condition A.R.
Book ChapterDOI
Electronic Properties of Amorphous Semiconductors
TL;DR: The problem of extracting a coherent picture from the experiments of amorphous semiconductors is particularly difficult as mentioned in this paper, since many experiments fail to distinguish between mechanisms of quite different physical origin.
Journal ArticleDOI
Transport properties of glass‐silicon heterojunctions
B. Dunn,J. D. Mackenzie +1 more
TL;DR: In this paper, an exponential trap distribution is suggested and trap density calculations agree with literature results, showing that chalcogenide glass/silicon structures behave like ideal abrupt heterojunctions.
Journal ArticleDOI
Photoelectric properties of Ag–As–S glasses
TL;DR: In this article, the photovoltaic properties of glassy Ag-As-S ion-conducting semiconductors have been studied and photoconductive and photovolcanic responses in glassy ag-As−S ion−conducting materials have been investigated.
References
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Journal ArticleDOI
Optical properties of amorphous chalcogenide alloy films
E.A. Fagen,H. Fritzsche +1 more
TL;DR: In this paper, the optical absorption constant is found to increase exponentially with photon energy in the range 1.0 to 1.2 eV, and does not exhibit a well-defined edge.
Journal ArticleDOI
Photo-voltage induced by capture of photo-carriers by surface traps. Surface photo-voltage on silicon under flat band conditions
TL;DR: In this article, a new form of photo-voltage is studied, which is due to charge accumulation on surface states from photo-injected carriers, which may be of considerable magnitude and under definite conditions (at low temperatures, for instance) substantially exceed the ordinary barrier bipolar photo voltage.
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