PatentDOI
Plasma atomic layer deposition
Harm C. M. Knoops,Koen de Peuter,Wilhelmus M. M. Kessels +2 more
- pp 131-157
TLDR
In this article, the authors optimized the gas residence time during an excited species phase, where activated reactant is supplied such as from a plasma, to increase the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and reducing impurities in the layer.Abstract:
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.read more
Citations
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Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
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Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
TL;DR: In this paper, a process and system for depositing a thin film onto a substrate using atomic layer deposition (ALD) is described. But it is not shown how to apply ALD to a metal oxide layer.
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Semiconductor processing reactor and components thereof
TL;DR: In this article, the authors describe a gas delivery system that includes a plurality of gas lines for providing at least one process gas to the reaction chamber and a mixer that is configured to diffuse process gases.
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Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same
Lucian Jdira,Herbert Terhorst,Michael W. Halpin,Carl White,Todd Dunn,Eric Shero,Melvin Verbass,Christopher Wuester,Kyle Fondurulia +8 more
TL;DR: In this paper, a gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas-inlet port of the Wafer Processing Reactor.
References
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Journal ArticleDOI
Low-Temperature Al2O3 Atomic Layer Deposition
TL;DR: In this article, the properties of low-temperature Al2O3 ALD films were investigated versus growth temperature by depositing films on Si(100) substrates and quartz crystal microbalance (QCM) sensors.
Journal ArticleDOI
Conformal Coating on Ultrahigh-Aspect-Ratio Nanopores of Anodic Alumina by Atomic Layer Deposition
TL;DR: In this paper, anodic alumina (AA) membranes were coated with Al2O3 and ZnO ALD films and subsequently analyzed using cross-sectional scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).
Journal ArticleDOI
Ca test of Al2O3 gas diffusion barriers grown by atomic layer deposition on polymers
TL;DR: In this paper, quantitative Ca tests were used to determine the water vapor transmission rate (WVTR) through 25nm thick Al2O3 gas diffusion barriers grown on plastic by atomic layer deposition (ALD).
Journal ArticleDOI
Atomic Layer Deposition of Platinum Thin Films
TL;DR: In this article, the atomic layer deposition (ALD) was used to grow a thin platinum thin film at 300 °C by using methylcyclopentadienyl trimethylplatinum (MeCpPtMe3) and oxygen as precursors.