Patent
Porous dielectric material with improved pore surface properties for electronics applications
TLDR
In this paper, an improved porous structure for semiconductor devices and a process for making the same was proposed, which may be applied to an existing porous structure, which can be deposited, for example, between patterned conductors.Abstract:
This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.read more
Citations
More filters
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Substrate Processing Apparatus
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
Patent
Sequential deposition/anneal film densification method
Raihan M. Tarafdar,George D. Papasouliotis,Ron Rulkens,Dennis M. Hausmann,Jeff Tobin,Adrianne K. Tipton,Bunsen Nie +6 more
TL;DR: In this paper, a silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique, and the layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film.
Patent
Multilevel interconnect structure with air gaps formed between metal leads
Robert H. Havemann,Shin-Puu Jeng +1 more
TL;DR: In this article, a method for forming air gaps 22 between metal leads 16 of a semiconductor device and semiconductor devices for same was proposed. But this method requires the metal leads to have a low dielectric constant and result in reduced sidewall capacitance.
Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
References
More filters
Book
Sol-Gel Science: The Physics and Chemistry of Sol-Gel Processing
TL;DR: Gel-Derived and Conventional Ceramics: as discussed by the authors Theoretical analysis of deformation and flow in gels and a comparison of gel-derived and conventional ceramics.
Journal ArticleDOI
Hydrophobic silica aerogels
H. Yokogawa,M. Yokoyama +1 more
TL;DR: The structure of trimethylsilyl modified silica aerogel (TMSA) was the silica matrix produced by hydrolysis and condensation of only tetramethoxysilane (TMOS).
Journal ArticleDOI
Dielectric properties of aerogels
TL;DR: In this paper, the real and imaginary components of the complex relative permittivity at 298 K using microwave frequencies (2, 10, and 18-40 GHz) for bulk SiO2-aerogels and for two types of organic aerogels, resorcinol-formaldehyde (RF), were measured.
Patent
Semiconductor device having multilayered wiring structure with a small parasitic capacitance
Mitsuru Sakamoto,Hamano Kuniyuki +1 more
TL;DR: In this paper, a mixture of basic and acid oxides is used to form a porous insulating film, which is then used to cover the surface of the wiring layers of a semiconductor device.
Patent
A method for producing metal oxide aerogels having densities less than 0.02 g/cm?3
TL;DR: In this article, a two-step method is described for making transparent aerogels which have a density of less than 0.003 g/cm3 to those with a density more than 1.8 g/mm3, by a sol/gel process and supercritical extraction.