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Journal ArticleDOI

Power Amplification with IMPATT Diodes in Stable and Injection-Locked Modes

Y. Takayama
- 01 Apr 1972 - 
- Vol. 20, Iss: 4, pp 266-272
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TLDR
In this paper, a method of graphical interpretation of the characteristics of negative-resistance diode simplifiers, based on the large-signal diode admittance chart, is presented.
Abstract
The behavior of nonlinear power amplifiers using IMPATTdiodes in both stable and injection-locked modes was investigated theoretically and experimentally. A method of graphical interpretation of the characteristics of negative-resistance diode simplifiers, based on the large-signal diode admittance chart, is presented. The characteristics of the simplified model of the reflection-type amplifier using an X-band Read-type IMPATTdiode have been evaluated. The experimental results of power amplification using an X-band Si IMPATTdiode in both stable and injection-locked modes under various circuit conditions are given. It was shown that nonlinearity of the IMPATT diode susceptance causes distortions in the amplification and injection-locking characteristics.

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Citations
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Journal ArticleDOI

Injection locking of microwave solid-state oscillators

TL;DR: Injection locking of microwave solid-state oscillators is discussed in this article, based on the familiar theorem that the total impedance times the current is equal to the applied voltage, based on which the locking range, large-signal injection, locking stability, and AM and FM noise are analyzed.
Journal ArticleDOI

Analysis of MESFET injection-locked oscillators in fundamental mode of operation

TL;DR: In this paper, nonlinear analyses of MESFET oscillator in free-running and injection-locked states are studied based on the Volterra series method and stability analysis, which is capable of quantitatively analyzing the injection locking performance of oscillator using three-terminal devices in the fundamental mode of operation.
Journal ArticleDOI

Analysis of Nonlinear Characteristics and Transient Response of IMPATT Amplifiers

TL;DR: In this paper, the effects of bandwidth on transient response of the IMPATT amplifiers as applied to phase modulated signals and amplitude-modulated signals are investigated in detail, and the relationship between the transition switching time and the amplifier bandwidth is derived.
Journal ArticleDOI

A Phase-Locking Method for Beam Steering in Active Array Antennas

TL;DR: In this article, a new principle for phase shifting, and hence beam steering, on an active array antenna is described, where each individual RF source is phase locked by a stable locking signal which is close in frequency to the nth harmonic of its free-running frequency.
Journal ArticleDOI

Stability Analysis of Injection-Locked Oscillators in Their Fundamental Mode of Operation

TL;DR: Phase-lock stability of fundamental-wave injection-synchronized oscillators is investigated on the basis of a new time-domain approach and both exact and first-order approximate stability criteria are derived in a fully analytical form suitable for computer implementation.
References
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Journal ArticleDOI

Large-signal analysis of a silicon Read diode oscillator

TL;DR: In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.
Journal ArticleDOI

A Study of Locking Phenomena in Oscillators

R. Adler
TL;DR: In this paper, a differential equation is derived which gives the oscillator phase as a function of time, and with the aid of this equation, the transient process of "pull-in" as well as the production of distorted beat note are described in detail.
Journal ArticleDOI

Some basic characteristics of broadband negative resistance oscillator circuits

TL;DR: In this article, the behavior of oscillators with multiple-resonant circuits is discussed, and the condition for free-running stable oscillations, injection locking phenomena, the stable locking range, and a condition for parasitic oscillations are discussed.
Journal ArticleDOI

Negative-resistance diode power amplification

TL;DR: In this paper, an analysis of the nonlinear behavior of power amplifiers utilizing negative-resistance diodes in a reflection circuit is presented for both stable and locked-oscillator modes of operation.
Journal ArticleDOI

Avalanche transit time microwave oscillators and amplifiers

TL;DR: In this article, two different diode structures were used for microwave oscillators and amplifiers employing the avalanche transit-time properties originally discussed by Read, and the results were shown to be in qualitative agreement with the small-signal theory of Misawa.