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Preparation and characterization of Cu(In1−xGax)3Se5 thin films

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TLDR
In this article, a polycrystalline Cu(In1−xGax)3Se5 thin films were prepared by four source evaporation with controlling and shielding of the molecular beams from elemental sources.
Abstract
Polycrystalline Cu(In1−xGax)3Se5 thin films were prepared by four source evaporation with controlling and shielding of the molecular beams from elemental sources. Ga content x, can be controlled by deposition times of CuIn3Se5 and CuGa3Se5 layers, which form Cu(In1−xGax)3Se5 films through the interdiffusion. X‐ray diffraction analyses showed that the films with x≲0.5 have an ordered vacancy chalcopyrite and the films with x≳0.5 have a zinc blende structure. The optical band gap of the films linearly increased from 1.23 eV (x=0) to 1.85 eV (x=1) with increasing Ga content. The conductivity of the films was about 10−6/Ω cm and about 10−7/Ω cm under and above x=0.3, respectively.

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Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties

TL;DR: In this article, the effects of Ga additions on the electronic and structural properties of CuInSe2 were theoretically studied using a first-principles band structure method, and it was shown that with increasing xGa, the valence band maximum of CIGS decreases slightly, while the conduction band minimum increases significantly.
Journal ArticleDOI

Thin Film Deposition Methods for CuInSe2Solar Cells

TL;DR: In this paper, the concept and operation principle of thin-film solar cells, as well as the most important thin film solar cell materials are discussed, and the properties of CuInSe2 and related compounds are reviewed.
Journal ArticleDOI

Tunable Photoluminescence Wavelength of Chalcopyrite CuInS2-Based Semiconductor Nanocrystals Synthesized in a Colloidal System

TL;DR: Chalcopyrite-type CuInS2-based alloyed fluorescent nanocrystals (NCs) were synthesized by heating an organometallic solution to demonstrate optical property tunability as discussed by the authors.
Journal ArticleDOI

Investigation of Cu(In,Ga)Se2 thin‐film formation during the multi‐stage co‐evaporation process

TL;DR: In this article, the growth mechanism for chalcopyrite-type thin films when varying the Cu content during a multi-stage deposition process is studied, and the film structure and morphology are studied by X-ray diffraction and scanning electron microscopy.
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Raman spectra of the ordered vacancy compounds CuIn3Se5 and CuGa3Se5

TL;DR: In this paper, the optical vibrational modes of ordered vacancy compounds were obtained by Raman spectra at various temperatures, and all the lines observed, except the B1 modes, present a reduction in their frequencies by about 10% as compared to the corresponding values in the CuInSe2 and CuGaSe2 chalcopyrites.
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