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Patent

Quality measurement of an aerial image

TLDR
In this article, a method of measuring the quality of a simulated aerial image includes receiving as input a mask pattern for a chip design, simulating an aerial image of the mask pattern, calculating an error area representative of a deviation between an ideal boundary of the chip design and a boundary of simulated aerial images, calculating maximum and average end-of-line deviations between the ideal boundary, and displaying a worst quality area in the simulated UAV image as a function of the error area and the maximum or average end of line deviations for visual inspection.
Abstract
A method of measuring the quality of a simulated aerial image includes receiving as input a mask pattern for a chip design, simulating an aerial image of the mask pattern, calculating an error area representative of a deviation between an ideal boundary of the chip design and a boundary of the simulated aerial image, calculating maximum and average end-of-line deviations between the ideal boundary of the chip design and the boundary of the simulated aerial image, and displaying a worst quality area in the simulated aerial image as a function of the error area and the maximum and average end-of-line deviations for visual inspection.

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Citations
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Method for post-OPC multi layer overlay quality inspection

TL;DR: In this paper, a method for post-optical proximity correction (OPC) multi-layer overlay quality inspection includes the steps of generating a virtual target mask for a first mask and a second mask overlay using design rules at least partially defining the relationship between the first masks and the second masks.
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TL;DR: In this paper, a method of generating a mask for use in an imaging process pattern was proposed, which includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target patterns that correspond to the at least 1 feature categories; and (e) generating a statistical summary which indicates the error value for each feature identified
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TL;DR: In this paper, a method for determining registration error of a feature on a mask, including providing a first aerial image that was captured by means of a position measuring device and including at least the feature, simulating, from pattern specifications of the mask, a second aerial image, taking into account at least one effect that causes distortion of the first image, was presented.
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TL;DR: In this paper, the position of a structure on a mask for microlithography is determined by comparing an aerial image, measured by a recording device, of a portion of the mask with an aerial images determined by simulation.
References
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Patent

Optical proximity correction method and apparatus

TL;DR: In this article, a run set is generated from a correction table that has the plurality of correction values used to correct a plurality of features of the layout design that have a selected space dimension.
Patent

Performing optical proximity correction with the aid of design rule checkers

TL;DR: In this article, a method is disclosed for identifying regions of an integrated circuit layout design where optical proximity correction will be most useful and then performing optical proximity corrections on those regions only.
Patent

Process window based optical proximity correction of lithographic images

TL;DR: In this article, a method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate is presented, which comprises initially providing a mask pattern of a feature to be created on the substrate using the mask.
Patent

Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques

TL;DR: In this paper, a method of generating complementary masks for use in a multiple-exposure lithographic imaging process is proposed, which includes the steps of identifying horizontal critical features and vertical critical features from a plurality of features forming a layout; identifying interconnection areas which are areas in which one of the horizontal critical feature or the vertical critical feature contacts another feature of the layout; defining a set of primary parameters on the basis of the proximity of the plurality of feature relative to one another; and generating an edge modification plan for each interconnection area based on the primary parameters.
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System and method of providing mask defect printability analysis

TL;DR: In this article, a simulated wafer image of a physical mask and a defect-free reference image are used to generate a severity score for each defect, thereby giving a customer meaningful information to accurately assess the consequences of using a mask or repairing that mask.