Patent
Radical-component oxide etch
Reads0
Chats0
TLDR
In this article, a method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor.Abstract:
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.read more
Citations
More filters
Patent
Semiconductor processing systems having multiple plasma configurations
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
Patent
Methods for etch of metal and metal-oxide films
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
Patent
Methods for etch of sin films
TL;DR: In this paper, a method of selectively etching silicon nitride from a substrate comprising a silicon oxide layer and a silicon dioxide layer is proposed. But the method requires the substrate to be exposed to the reactive gas in the gas reaction region of the substrate processing chamber.
Patent
Processing systems and methods for halide scavenging
Anchuan Wang,Xinglong Chen,Zihui Li,Hiroshi Hamana,Zhijun Chen,Ching-Mei Hsu,Jiayin Huang,Nitin K. Ingle,Dmitry Lubomirsky,Shankar Venkataraman,Randhir Thakur +10 more
TL;DR: In this article, a system, chambers, and processes are provided for controlling process defects caused by moisture contamination in a vacuum or controlled environment, and the chambers may include configurations to provide additional processing capabilities in combination chamber designs.
Patent
Selective etch of silicon by way of metastable hydrogen termination
TL;DR: In this paper, the authors described a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor, where the plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials.
References
More filters
Patent
Semiconductor device, manufacturing method, and electronic device
TL;DR: In this paper, the authors proposed a thin-film transistor with an active layer made of polycrystalline zinc oxide (ZnO) to which a group V element is added.
Patent
Multiple chamber integrated process system
Dan Maydan,Sasson Somekh,David Nin-Kou Wang,David Cheng,Masato M. Toshima,Isaac Harari,Peter D. Hoppe +6 more
TL;DR: In this paper, an integrated modular multiple chamber vacuum processing system is described, which includes a load lock, may include an external cassette elevator and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load-lock chamber.
Patent
Plasma processing apparatus
TL;DR: In this paper, the problem of providing a plasma processing apparatus with a gas feed means which feeds gas in pulses into a reaction chamber, where the processing speed and shape of a sample can be set uniform through all its surface, even if an ultrasonic free flow is not established.
Patent
Dry etching method
TL;DR: In this article, a dry etching method for aluminum-based layer for effectively combatting the after-corrosion in accordance with three aspects is presented, while a resist mask and chlorine based gas as known per se are used, S 2 F 2 is used during etching of the barrier metal layer.