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Resistivity and thermopower calculations in half-Heusler Ti1-xScxNiSn alloys from the KKR-CPA method

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TLDR
In this article, the effect of chemical disorder on Fermi surface features (i.e. group velocities and life-times related to real and imaginary parts of complex dispersion curves, respectively) was investigated.
Abstract
The Korringa–Kohn–Rostoker method with the coherent potential approximation (KKR-CPA) was applied to calculate electronic structure and transport coefficients in disordered Ti1−xScxNiSn, where semiconductor-to-metal crossovers have recently been observed in resistivity and thermopower experiments (Horyn et al 2004 J. Alloys Compounds 363 10; Romaka et al 2005 J. Alloys Compounds 396 64). We have investigated the effect of chemical disorder on Fermi surface features (i.e. group velocities and life-times related to real and imaginary parts of complex dispersion curves, respectively). This analysis allowed us to shed light on the principal mechanism responsible for the variation of thermoelectric properties. Using the well-known formulae and performing integration over the complex Fermi surface, the residual conductivity and the thermopower slope S/T were estimated. Satisfying agreement between theoretical results and experimental data (measured at 90 and 300 K) has been found. This may indicate that modifications of electronic structure near EF are predominantly responsible for the strong decrease of thermopower in Ti1−xScxNiSn.

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Journal ArticleDOI

Thermoelectric properties and electronic structure of p-type Mg2Si and Mg2Si0.6Ge0.4 compounds doped with Ga

TL;DR: In this article, the effect of Ga doping on thermoelectric properties has also been investigated by measurements of thermopower, electrical resistivity, Hall coefficient and thermal conductivity in temperature range from 300 to 850 K.
Journal ArticleDOI

Thermoelectric performance of half-Heusler compounds TiNiSn and TiCoSb

TL;DR: In this paper, the electronic structures of half-Heusler compounds TiNiSn and TiCoSb were investigated by using the fullpotential linearized augmented plane-wave method, and the transport coefficients (Seebeck coefficient, electrical conductivity, and power factor) were calculated within the Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture.
Journal ArticleDOI

Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2

TL;DR: In this paper, the structural properties of AgSbX2 (X=Se and Te) materials were investigated by X-ray diffraction and SEM microscopy, and the electrical conductivity, thermal conductivity and Seebeck coefficient have been measured as a function of temperature in the range from 300 to 600 k.
Journal ArticleDOI

A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials

TL;DR: In this article, the results of electronic structure calculations for alloying and impurity dilution are presented and the sign of the thermopower in the doped systems is analyzed from the position of the Fermi level with respect to valence/conduction band edges.
Journal ArticleDOI

Calculating electron transport coefficients of disordered alloys using the KKR-CPA method and Boltzmann approach: Application to Mg 2 Si 1 − x Sn x thermoelectrics

TL;DR: In this paper, a Boltzmann transport approach was used to determine temperature-dependent electron-transport properties such as electrical conductivity, thermopower, and related quantities such as the Lorenz number and power factor.
References
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Journal ArticleDOI

Origin and properties of the gap in the half-ferromagnetic Heusler alloys

TL;DR: In this article, the authors studied the role of chemical composition in the half-ferromagnetic Heusler alloys using the full-potential screened Korringa-Kohn-Rostoker method.
Journal ArticleDOI

Transport properties of pure and doped mnisn (m=zr, hf)

TL;DR: In this paper, the authors studied the transport properties of pure and doped intermetallics of the form MNiSi (M=Zr, Hf), the structures known as the half-Heusler alloys.
Journal ArticleDOI

Effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds

S. Sakurada, +1 more
TL;DR: In this article, the effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds was studied and it was found that the substitution of Ti for Zr, Hf reduced the thermal conductivity significantly to a low value of 3.0W∕mK at room temperature.
Journal ArticleDOI

Efficient dopants for ZrNiSn-based thermoelectric materials

TL;DR: In this article, four n-type dopants have been found for ZrNiSn-based thermoelectric materials, which are Nb or Ta at the zirconium sites, and Sb or Bi at the tin sites.
Journal ArticleDOI

Electronic structure and magnetism of Fe 3-x V x X (X=Si, Ga, and Al) alloys by the KKR-CPA method

TL;DR: In this article, the authors presented first principles charge and spin-consistent electronic structure computations on the Heusler-type disordered alloys for three different metalloids.
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