Semiconductor Interfaces, Microstructures and Devices: Properties and applications

TLDR: In this article, an electric field induced localization in superlattices was performed using a quantum well infrared photodetector, and the results were used for the characterization of silicon carbide polytypes for electronic applications.

Abstract: Electric field induced localization in superlattices R Tsu Intersubband transitions and quantum well infrared photodetectors KK Choi Real time spectroscopic ellipsometry monitoring of semiconductor growth and etching RW Collins et al X-ray reflectivity from heteroepitaxial layers P Miceli Spontaneous and stimulated emissions from optical microcavity structures H Yokoyama et al Radiative and nonradiative recombination in AlGaAs and GaAsP heterostructures and some features of the corresponding quantum well laser Zh I Alferov and DZ Garbuzov Far-infrared cyclotron resonance of 2-dimensional electron gas in III-V semiconductor heterostructures MO Manasreh Optics in lower dimensional quantum confined II-VI heterostructures AV Nurmikko and RL Gunshor Growth and doping of silicon by low temperature molecular beam epitaxy H-J Gossmann and DJ Eaglesham Point defects and charge traps in the Si/SiO^O2 system and related structures EH Poindexter Growth and characterization of silicon carbide polytypes for electronic applications JA Powell et al