Journal ArticleDOI
Silicon homoepitaxial thin films via silane pyrolysis: A HEED and Auger electron spectroscopy study☆
R.C. Henderson,Rohe F. Helm +1 more
TLDR
In this article, a SiH 4 pyrolysis at moderate temperatures (823 −983 °C) and low pressure (0.15 −0.02 torr) was used to demonstrate that the absence of detectable impurities was the necessary surface condition to obtain such material.About:
This article is published in Surface Science.The article was published on 1972-04-01. It has received 73 citations till now. The article focuses on the topics: Auger electron spectroscopy & Activation energy.read more
Citations
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Journal ArticleDOI
Silicon molecular beam epitaxy
TL;DR: The silicon molecular beam epitaxy (MBE) technique has only been used in silicon device applications in the last 5 years as discussed by the authors, and it is expected that in the near future silicon MBE will be applied to a much wider range of silicon devices including silicon integrated circuits.
Book ChapterDOI
Adsorption and Desorption
TL;DR: In this paper, the authors reviewed models of adsorption processes from both the gas phase and from the liquid phase onto a solid and emphasized the role of adsorbate bonding.
Journal ArticleDOI
Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
TL;DR: In this article, the rates and mechanisms of chemisorption on the Si(111)-(7×7) surface have been investigated under UHV conditions for SiH4, Si2H6, and Si3H8.
Journal ArticleDOI
Reactive sticking coefficients for silane and disilane on polycrystalline silicon
TL;DR: In this paper, reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions.
Journal ArticleDOI
Kinetics of surface reactions in very low‐pressure chemical vapor deposition of Si from SiH4
S. M. Gates,Santosh Kulkarni +1 more
TL;DR: In this article, a steady-state kinetic model for the chemical vapor deposition (CVD) growth of Si films from SiH4 on Si(100) is presented, where the only adsorbing species is SiH 4 (absence of homogeneous siH4 dissociation is presumed).
References
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Journal ArticleDOI
Auger electron spectroscopy
TL;DR: Auger Electron Spectroscopy has recently emerged as one of the most sensitive methods of surface analysis and is becoming widely accepted due to the relative simplicity of the LEED-Auger and cylindrical mirror analyzers as mentioned in this paper.
Journal ArticleDOI
Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon
J. J. Lander,J. Morrison +1 more
TL;DR: In this article, low voltage electron diffraction and pumping speed measurements have been used to study the reactions of oxygen with clean Si (111) and (100) surfaces in the temperature range between 600° and 1000°C and the oxygen pressure range between 7×10−9 and 1 ×10−4 mm Hg.
Journal ArticleDOI
High sensitivity auger electron spectrometer
TL;DR: An Auger electron spectrometer for studies of solid surfaces which is considerably more sensitive than currently used instruments has been developed as mentioned in this paper, and greatly improved signal-to-noise ratio of the spectrometers made it possible to display the 0-1000 eV Auger spectrum on an oscilloscope at a scanning rate of 20 000 V/sec.
Journal ArticleDOI
Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum
TL;DR: In this paper, a replication technique for electron microscopy has been developed which is capable of detecting 3 A steps on surfaces, which is used to observe the growth of silicon on a (111) silicon surface in ultrahigh vacuum.