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Journal ArticleDOI

Silicon photodiode device with 100% external quantum efficiency

Edward F. Zalewski, +1 more
- 15 Sep 1983 - 
- Vol. 22, Iss: 18, pp 2867-2873
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TLDR
A device utilizing four inversion layer photodiodes in a light-trapping arrangement was constructed and tested and it was found that applying a reverse bias voltage extended the high quantum efficiency response over the entire visible spectrum and up to the highest radiant power level studied.
Abstract
A device utilizing four inversion layer photodiodes in a light-trapping arrangement was constructed and tested. The device was found to have a photon-to-electron conversion efficiency of 0.999 for short wavelength and low power visible radiation. It was found that applying a reverse bias voltage extended the high quantum efficiency response over the entire visible spectrum and up to the highest radiant power level studied (several milliwatts). Several radiometrically important characteristics were studied and the results presented: spectral reflectance; polarization sensitivity; quantum efficiency vs wavelength, photon flux density, and reverse bias voltage; and dark current vs reverse bias.

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References
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Journal ArticleDOI

Interspecimen Comparison of the Refractive Index of Fused Silica

TL;DR: In this paper, the index of refraction of optical quality fused silica (SiO2) was determined for 60 wavelengths from 0.21 to 3.71 μ at 20°C.
Journal ArticleDOI

Spectral response self-calibration and interpolation of silicon photodiodes.

TL;DR: The possibility of interpolating the internal quantum efficiency of silicon photodiodes using a model with three adjustable parameters is investigated, and an insignificant difference was observed at 677 nm.
Journal ArticleDOI

Silicon UV-Photodiodes Using Natural Inversion Layers

T E Hansen
- 01 Dec 1978 - 
TL;DR: Induced junction photodiodes have been fabricated and characterized in this paper, where the effect of high surface recombination is counteracted and an efficient photosensitivity is prediced at UV- and blue-wavelengths.
Journal ArticleDOI

Silicon detector nonlinearity and related effects.

TL;DR: An explanation is put forth for the observed nonlinearity in the red spectral region of the response of silicon photodiodes, and correlation of non linearity with spatial nonuniformity of response is demonstrated.
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