Patent
Silicon-selective dry etch for carbon-containing films
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TLDR
In this article, a SiConi etch in combination with a flow of reactive oxygen is described, which reduces the carbon content in the near surface region and allows the siConi™ etch to proceed more rapidly.Abstract:
A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.read more
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Patent
Semiconductor processing system and methods using capacitively coupled plasma
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TL;DR: In this article, a system, chambers, and processes are provided for controlling process defects caused by moisture contamination in a vacuum or controlled environment, and the chambers may include configurations to provide additional processing capabilities in combination chamber designs.
References
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Enhancement of remote plasma source clean for dielectric films
Thomas Nowak,Kang Sub Yim,Sum-Yee Betty Tang,Kwangduk Douglas Lee,Vu Ngoc Tran Nguyen,Dennis Singleton,Martin Jay Seamons,Karthik Janakiraman,Ganesh Balasubramanian,Mohamed Ayoub,Wendy H. Yeh,Alexandros T. Demos,Hichem M'Saad +12 more
TL;DR: In this article, a remote plasma source is used to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films.
Patent
Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
Michael Chiu Kwan,Eric H. Liu +1 more
TL;DR: In this article, a method and apparatus for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1 was described by cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions.
Patent
An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
Chien-Teh Kao,Jing-Pei Chou,Salvador P. Umotoy,Mei Chang,Xiaoxiong Yuan,Yu Chang,Xinliang Lu,See-Eng Phan,William Kuang,Gwo-Chuan Tzu,David T. Or +10 more
TL;DR: In this paper, the authors propose a method and apparatus for cleaning a processing chamber comprising blocking a flow of cooling fluid to a channel within a support member within the processing chamber, elevating the support member to be within about 0.1 inches of a gas distribution plate, heating the gas distribution plates, and introducing a thermally conductive gas through the distribution plate into the processing chambers.
Patent
In-situ dry clean chamber for front end of line fabrication
Chien-Teh Kao,Jing-Pei Chou,Chiukin (Steven) Lai,Sal Umotoy,Joel M. Huston,Son Trinh,Mei Chang,Xiaoxiong (John) Yuan,Yu Chang,Xinliang Lu,Wei W. Wang,See-Eng Phan +11 more
TL;DR: In this paper, a lid assembly for semiconductor processing is described, which includes a first electrode comprising an expanding section that has a gradually increasing inner diameter, and a second electrode disposed opposite the first electrode.
Patent
Methods of thin film process
Nitin K. Ingle,Jing Tang,Yi Zheng,Zheng Yuan,Zhenbin Ge,Xinliang Lu,Chien-Teh Kao,Vikash Banthia,William H. McClintock,Mei Chang +9 more
TL;DR: In this article, a plurality of features across a surface of a substrate, with at least one space being between two adjacent features, is formed on the features and within the at least 1 space.