Single‐Source III/V Precursors: A New Approach to Gallium Arsenide and Related Semiconductors

TLDR: In this paper, a new approach to the preparation of GaAs and InP thin films based on single-source precursors is discussed, which feature strong σ-bonding between the group III and V elements, together with substituents that are capable of facile thermal elimination.

Abstract: Until recently, the production of gallium arsenide, indium phosphide, and related compound semiconductors has fallen in the domain of the materials scientist and the electrical engineer By clever use of classical chemistry, exemplified by the thermal reaction of Me3Ga and AsH3, it is possible to make semiconductors on a commercial scale However, there are some drawbacks associated with the existing methodology, including the environmental and health hazards of handling pyrophoric and toxic starting materials as well as stoichiometry control problems and undesirable side reactions Can the synthetic inorganic and organometallic chemist play a useful role in this important area by designing and developing new reagents for the production of semiconductor materials? We believe the answer is yes, and in this article we discuss a new approach to the preparation of GaAs and InP thin films based on single-source precursors These compounds feature strong σ-bonding between the group III and V elements, together with substituents that are capable of facile thermal elimination The III/V precursors are more stable toward air and moisture and considerably less toxic than either adducts or mixtures of group III and V compounds