Spectroscopy of excited states in In 0.53 Ga 0.47 As-InP single quantum wells grown by chemical-beam epitaxy

TLDR: The photoluminescence excitation (PLE) spectra were reported for six single quantum wells with thicknesses between 130 and 23 \AA{} grown on the same wafer by chemical-beam epitaxy.

Abstract: Photoluminescence excitation (PLE) spectra are reported for six single quantum wells with thicknesses between 130 and 23 \AA{} grown on the same wafer by chemical-beam epitaxy. The very strong, narrow line emission from these high-quality quantum wells enabled us to perform PLE with a lamp-monochromator combination as the excitation source. All of the observed excitonic absorption peaks are assigned. Good fits to the spectra can be made with band offsets of ${Q}_{e}\ensuremath{\approx}60%$ and ${Q}_{h}\ensuremath{\approx}40%$ and masses ${m}_{e}^{*}=0.041{m}_{0}$, ${m}_{\mathrm{hh}}^{*}=0.465{m}_{0}$, and ${m}_{\mathrm{lh}}^{*}=0.085{m}_{0}$. Energy-dependent corrections for ${m}_{e}^{*}$ due to conduction-band nonparabolicities are essential for these fits and yield ${\ensuremath{\gamma}}_{e}=3.3\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}15}$ ${\mathrm{cm}}^{2}$ for the ${\ensuremath{\gamma}}_{e}{k}^{4}$ correction term in the energy dispersion.