Journal ArticleDOI
Spin injection across a heterojunction: a ballistic picture.
Can-Ming Hu,Toru Matsuyama +1 more
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TLDR
A general expression for the spin-injection rate in a heterojunction made of two ballistic electrodes is state, consistent with the well-documented results of ferromagnetic-metal junctions and explains the recent experimental results of a dilute-magnetic-semiconductor/semiconductors junction.Abstract:
Spin injection across heterojunctions plays a decisive role in the new field of spintronics. Within the ballistic transport regime, we state a general expression for the spin-injection rate in a heterojunction made of two ballistic electrodes. Both the spin-orbit interaction and interface scattering effect are taken into account. Our model is consistent with the well-documented results of ferromagnetic-metal junctions. It explains the recent experimental results of a dilute-magnetic-semiconductor/semiconductor junction and predicts solutions to enhance the spin-injection rate across a ferromagnetic-semiconductor junction.read more
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Journal ArticleDOI
Spintronics: Fundamentals and applications
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Journal ArticleDOI
Semiconductor Spintronics
TL;DR: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role as mentioned in this paper, and is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism.
Journal ArticleDOI
Magnetic properties and spin polarization of Co 2 MnSi Heusler alloy thin films epitaxially grown on GaAs(001)
Wenting Wang,Wenting Wang,Marek Przybylski,Marek Przybylski,Wolfgang Kuch,Wolfgang Kuch,L. I. Chelaru,L. I. Chelaru,Jian Wang,Jian Wang,Y. F. Lu,J. Barthel,H. L. Meyerheim,J. Kirschner +13 more
TL;DR: The spin polarization of photoelectrons close to the Fermi level was found to be at most 12%, in contrast to the predicted half-metallic behavior as mentioned in this paper. But the spin polarization was not consistent with the predicted spin-resolved density of states.
Journal ArticleDOI
Electrical spin injection from ferromagnetic MnAs metal layers into GaAs
M. Ramsteiner,H. Y. Hao,A. Kawaharazuka,H. J. Zhu,M. Kästner,Rudolf Hey,Lutz Däweritz,Holger T. Grahn,K. H. Ploog +8 more
TL;DR: In this article, the spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements.
Journal ArticleDOI
Symmetry of spin transport in two-terminal waveguides with a spin-orbital interaction and magnetic field modulations
Feng Zhai,Hongqi Xu +1 more
TL;DR: In this paper, the spin transport in two-terminal quantum waveguide structures with Rashba spin-orbit coupling and magnetic field modulations is analyzed and the results are expected to provide accuracy tests for experimental measurements and numerical calculations, as well as guidelines for spin-based device designs.