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Journal ArticleDOI

Studies of Individual Dislocations in Crystals by X‐Ray Diffraction Microradiography

A. R. Lang
- 01 Nov 1959 - 
- Vol. 30, Iss: 11, pp 1748-1755
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TLDR
The distribution of imperfections within the interior of crystals has been studied using ''projection topographs'' which are x-ray diffraction images showing a projection of a slice of crystal and the imperfections in it as mentioned in this paper.
Abstract
The distribution of imperfections within the interior of crystals has been studied using ``projection topographs'' which are x‐ray diffraction images showing a projection of a slice of crystal and the imperfections in it Individual dislocations have been observed in single crystals of diamond, silicon, germanium, lithium fluoride, sodium chloride, silver chloride, magnesium oxide, calcite, quartz, and aluminum From the variation of dislocation contrast with the orientation of the x‐ray reflecting plane the direction of Burgers vector can be found Dislocations can be seen with good contrast when the product of linear absorption coefficient μ and slice thickness t is of the order of unity or less If μt≫1 the contrast is reversed through the Borrmann effect Stereo pairs of projection topographs can be prepared from the pair of reflections hkl and hkl

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Citations
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Journal ArticleDOI

A Dynamical Theory of Diffraction for a Distorted Crystal

TL;DR: In this article, a dynamical theory of X-ray and electron diffraction for a distorted crystal which has been briefly explained elsewhere (Acta cryst. 15 (1962) 1311) is presented in more detail.
Book ChapterDOI

Dislocations and Plastic Flow in the Diamond Structure

TL;DR: In this article, it is suggested that the high resistance to dislocation motion of D.S. crystals stems from a high Peierls potential, and the effect of this potential on dislocation dynamics is discussed.
Journal ArticleDOI

Oxygen precipitation in silicon

TL;DR: A review of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon is presented in this article, where the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results.
Book ChapterDOI

Dislocations in Lithium Fluoride Crystals

TL;DR: In this article, the role of dislocations in crystal plasticity, the fracture of crystals, and the theory of the etching process as a technique for observing disllocations is discussed.
References
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Journal ArticleDOI

Handbuch der Physik

M. De
Journal ArticleDOI

Copper Precipitation on Dislocations in Silicon

TL;DR: In this paper, the etch pits associated with either composite or screw dislocations are similar in form, indicating that the pits formed in as-grown crystals by the technique described identify all the dislocation.
Journal ArticleDOI

On the formation and properties of helical dislocations

TL;DR: The model of F-centres in CaF2 and their equilibrium characteristics are discussed in this article, where it is pointed out that helical dislocations should be generated in many materials under a wide variety of circumstances in which climb occurs.