Journal ArticleDOI
Study of defect states in GaN films by photoconductivity measurement
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TLDR
In this paper, a number of undoped n−type and Mg−doped p−type gallium nitride (GaN) samples were employed for photoconductivity spectroscopy at room temperature.Abstract:
Optical absorption by defect states in gallium nitride (GaN) films was studied by photoconductivity (PC) spectroscopy at room temperature. A number of undoped n‐type and Mg‐doped p‐type samples were employed in the present study. The PC response per absorbed photon decreased by more than four orders of magnitude as GaN became p‐type conducting. Furthermore, all the samples exhibit PC response at photon energies far below the band gap energy of GaN. The optical absorption increases with photon energy hν from 1.5 to 3.0 eV approximately as exp(hν/E0). The parameter E0 ranges from 180 to 280 meV, and is considerably smaller for the insulating p‐type sample. For a p‐type conducting sample, the PC response is flat between 0.7 and 1.4 eV. A model for the density of states distribution in the forbidden gap of GaN and the effect of Mg doping is proposed.read more
Citations
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Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
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Synthesis of inorganic solids using microwaves
TL;DR: A review of microwave-assisted synthesis of inorganic materials can be found in this article, where a variety of materials such as carbides, nitrides, complex oxides, silicides, zeolites, apatite, etc.
Journal ArticleDOI
Blue temperature-induced shift and band-tail emission in ingan-based light sources
TL;DR: In this article, a broad range of temperatures and pumping levels of high-brightness light-emitting AlGaN and InGaN/GaN single-quantum-well structures were studied over a broad spectrum of spectra, and a quantitative description of the blue temperature-induced shift was proposed assuming a Gaussian shape of the band tail.
Journal ArticleDOI
Microstructured silicon photodetector
TL;DR: In this paper, a generation-recombination gain mechanism has been proposed to explain the photoresponse of these photodiodes, and the calculated gain was approximately 1200 at 3V bias.
Journal ArticleDOI
Deep levels and persistent photoconductivity in GaN thin films
C. H. Qiu,J. I. Pankove +1 more
TL;DR: In this article, the photoconductivity spectra and the photocurrent response time were measured using a weak probe light at several times after the samples had been kept in the dark, and it was suggested that metastable centers at 1.1, 1.40, and 2.04 eV above the valence band edge are responsible for the PPC behavior in Mg-doped GaN, and that Ga vacancy is the candidate for PPC effect in n-type GaN.
References
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Optical Processes in Semiconductors
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)