Book ChapterDOI
Study of gap states in a-Si:H by transient current spectroscopy
J. Beichler,H. Mell +1 more
- pp 537-541
TLDR
The Schottky barrier structures have been made with n-type hydrogenated amorphous silicon (a-Si:H) prepared by the glow discharge decomposition of SiH4 and the density of gap states N(E) in the depletion layer of these diodes has been determined by analyzing the current transients caused by the emission of electrons after removal of a small forward bias.Abstract:
Schottky barrier structures have been made with n-type hydrogenated amorphous silicon (a-Si:H) prepared by the glow discharge decomposition of SiH4 The density of gap states N(E) in the depletion layer of these diodes has been determined by analysing the current transients caused by the emission of electrons after removal of a small forward bias Depending on the preparation conditions, the dopant concentration and the history of the structures (exposure to light, electron bombardment) N(E) near midgap ranges from 31015 to 10l8cm-3 The distribution of states is more similar to that deduced from field effect and space charge limited current data than to DLTS resultsread more
Citations
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Book ChapterDOI
Transport and recombination in hydrogenated amorphous silicon
TL;DR: In this article, the authors review important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.
References
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Journal ArticleDOI
Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
D.L. Staebler,C. R. Wronski +1 more
TL;DR: In this article, the authors show that long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a•Si':'H). Annealing above ∼150°C reverses the process.
Journal ArticleDOI
Investigation of the density of localized states in a-Si using the field effect technique
TL;DR: In this article, the field effect technique is applied to the experimental study of N (ϵ) in specimens of a-Si prepared by the glow discharge method and by vacuum evaporation.
Journal ArticleDOI
Doped amorphous semiconductors
TL;DR: In this article, the effect of n and p-type impurities on the electronic transport properties of substitutionally doped a-Si and a-Ge was discussed based on results from conductivity, drift mobility, Hall effect and thermoelectric power measurements and leads to the main conclusion that the donors introduce a new hopping path through the system which begins to dominate over tail state hopping when their density exceeds about 1018 cm-3.
Journal ArticleDOI
Electronic density of states in discharge‐produced amorphous silicon
M. Hirose,T. Suzuki,G. H. Döhler +2 more
TL;DR: The localized state density distribution in the mobility gap of glow-discharge amorphous silicon has been determined from capacitance-voltage characteristics for metal/oxide/amorphous silicon (MOS) structures.
Related Papers (5)
Electronic density of states in discharge‐produced amorphous silicon
M. Hirose,T. Suzuki,G. H. Döhler +2 more
Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures
D. L. Morel,T. D. Moustakas +1 more