Journal ArticleDOI
Super-gain transistors for IC's
TLDR
Transistors with current gains of 2000 to 10000 at collector currents less than 1 /spl mu/A can now be made in monolithic circuits, more than ten times the gain of present-day discrete transistors.Abstract:
Transistors with current gains of 2000 to 10000 at collector currents less than 1 /spl mu/A can now be made in monolithic circuits. This is more than ten times the gain of present-day discrete transistors. The significance of this breakthrough is greatest for IC operational amplifiers as lower input bias currents are constantly being sought. Circuit techniques are available, namely bootstrapping and cascade connections, that take advantage of the high-current gain of one transistor type and the high-breakdown voltage of the second, producing the equivalent of a high gain, high-voltage device. This may double the number of transistors needed to perform a given function, but it is an economical approach for monolithic IC's as active devices have a relatively low cost.read more
Citations
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Journal ArticleDOI
A precision FET-less sample-and-hold with high charge-to-droop current ratio
G. Erdi,P.R. Henneuse +1 more
TL;DR: In this article, a monolithic sample-and-hold amplifier without field-effect transistors is described, and its performance characteristics include: 3.5/spl mu/s acquisition time to 0.1 percent with a 5000-pF hold capacitor, 50 pA of droop current from 0 to 70/spl deg/C, 10/SUP 9/ charge-to-droop current ratio, and 0.3 mV of zero-scale error.
Journal ArticleDOI
Super-gain silicon MIS heterojunction emitter transistors
Martin A. Green,R. B. Godfrey +1 more
TL;DR: In this paper, a heterojunction emitter structure based on a tunneling metal-thin insulator-semiconductor (MIS) contact in conjunction with a shallow implanted base region is described.
Journal ArticleDOI
A high precision monolithic super-beta operational amplifier
TL;DR: In this paper, a single-chip integrated-circuit operational amplifier using thin-film resistors and super-gain transistors has been designed to achieve dc follower accuracies of 0.001 percent with 100-k/spl Omega/ source resistance.
DissertationDOI
High power wide bandgap cascode switching circuits
TL;DR: In this article, the effects of the cascode configuration on static (DC) device performance are quantified for a silicon super-junction (SJ) metal-oxide-semiconductor field effect transistor (MOSFET), silicon carbide (SiC) junction field-effect transistor JFET and SiC MOSFet.
Journal ArticleDOI
Ion-implanted super-grain transistors
TL;DR: In this article, the use of ion implantation to develop a viable high-yielding process for fabricating super-gain transistors for integrated circuits is discussed, the fabrication processes utilized, the pertinent device physics, the manufacturing tradeoffs, and the results obtained for two different ion-implanted base integrated-circuit processes.
References
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Journal ArticleDOI
Low-current alpha in silicon transistors
TL;DR: The falloff of alpha at low current in silicon has been investigated by means of transistors with guardring emitters as mentioned in this paper, and it has been found that the overwhelming part of the base current originates at the surface edge of the emitter.