Journal ArticleDOI
Super-gain silicon MIS heterojunction emitter transistors
Martin A. Green,R. B. Godfrey +1 more
TLDR
In this paper, a heterojunction emitter structure based on a tunneling metal-thin insulator-semiconductor (MIS) contact in conjunction with a shallow implanted base region is described.Abstract:
Silicon bipolar transistors are described with common emitter current gains approaching 25 000, believed to be the highest ever reported for a bipolar device. A heterojunction emitter structure based on a tunneling metal-thin insulator-semiconductor (MIS) contact in conjunction with a shallow implanted base region is responsible for this improved performance. The significance of this result lies in the fact that it demonstrates advantages in both the injection efficiency of the emitter and the control of base properties which may lead to improved silicon bipolar transistor performance over a range of applications.read more
Citations
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Journal ArticleDOI
Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface
TL;DR: In this article, the authors explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts and make estimates about upper bounds on transport parameters in the principal regions of the devices.
Journal ArticleDOI
Influence of oxide thickness nonuniformities on the tunnel current‐voltage and capacitance‐voltage characteristics of the metal‐oxide‐semiconductor system
TL;DR: In this article, a model for the tunnel current and high-frequency capacitance of a metal-oxide-semiconductor system with a very thin and nonuniform oxide layer is presented.
Journal ArticleDOI
Si/SiGe heterojunction bipolar transistor made by molecular-beam epitaxy
TL;DR: In this paper, the Si/SiGe heterostructure bipolar transistors (HBTs) were fabricated and compared to Si homojunction transistors with similar doping levels.
Patent
Bipolar inversion channel device
TL;DR: In this article, a new solid state field effect bipolar device was proposed for high current gain and low input capacitance, while avoiding the "punch-through" effects that limit the downward scaling of conventional bipolar and field effect devices.
Journal ArticleDOI
Silicon heterojunction bipolar transistors with amorphous and microcrystalline emitters
TL;DR: In this paper, the emitter Gummel number of bipolar transistors with an amorphous silicon emitter-base heterojunction is shown to be very large and the temperature dependence of the common-emitter current gain of such heter-junction bipolar Transistors is much smaller than that of conventional homojunction transistors.
References
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Journal ArticleDOI
Heterostructure bipolar transistors and integrated circuits
TL;DR: In this paper, the authors propose an inverted transistor strucure with a smaller collectors on top and a larger emitter on the bottom, with speed advantages over the common "emitter-up" design.
Journal ArticleDOI
The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
J. L. Moll,I. M. Ross +1 more
TL;DR: In this article, a method of analyzing transistor behavior for any base-layer impurity distribution is presented, in particular expressions for emitter efficiency, transverse sheet resistance R, transit time, and frequency cut-off f?.
Journal ArticleDOI
The emitter efficiency of bipolar transistors. Theory and experiments
TL;DR: In this paper, a figure of merit for the emitter is defined, which takes account of bandgap narrowing caused by high impurity concentrations, a doping-dependent lifetime, the built-in electric field and the recombination velocity at emitter contact.
Journal ArticleDOI
New experimental evidence for minority‐carrier MIS diodes
N. G. Tarr,D. L. Pulfrey +1 more
TL;DR: In this paper, the authors measured the short-circuit density and open circuit photovoltage voc at various illumination levels for Al•SiOx•pSi MIS photodiodes and found that the dark current in these diodes is dominated by minority carrier flow.
Tunnel transistor
TL;DR: In this article, a tunnel transistor which can be easily obtained by the conventional silicon planar technology was proposed, which promises fine control of electrical characteristics and high yield, and the yield per one wafer in the wafer checking has amounted to 100 percent.
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