Journal ArticleDOI
Synthesis and growth of ZnS, ZnSe, ZnTe, GaS, Ga2Se3 and InS crystals in Ga and in melts
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TLDR
In this article, a method suitable for the synthesis and crystallization of A II B VI and A III B VI chalcogenides is discussed, where the compounds were synthesized from their elements in metallic Ga and In used as solvents.About:
This article is published in Materials Research Bulletin.The article was published on 1968-06-01. It has received 18 citations till now. The article focuses on the topics: Crystallization.read more
Citations
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Journal ArticleDOI
Blue light emission from ZnSe p‐n junctions
TL;DR: In this paper, the van der Pauw method has been used to measure the properties of ZnSe p-n junctions and showed that the value of n in the I-V characteristics ranges from 14 to 18 and the diffusion potential is between 25 and 27 eV.
Journal ArticleDOI
Large InSe monocrystals grown from a non-stoichiometric melt
A. Chevy,A. Kuhn,Mickael Martin +2 more
TL;DR: In this paper, large monocrystals of the peritectic InSe were grown from an In1.12Se0.88 melt by the Bridgman method, with a diameter of 14 mm and a length of 30 mm.
Journal ArticleDOI
Single-crystal growth of layered crystals
TL;DR: In this article, a review describes those classical methods which are most frequently used to prepare crystalline samples of layered materials, and the most important basic concepts of crystal growth kinetics are summarized.
Journal ArticleDOI
Direct synthesis and crystallization of GaSb
TL;DR: In this article, a gallium antimonide was synthetized from gallium of 6N and antimony of 5N5 purity in a Bridgman-type growth apparatus in which different ampoule widths and lowering regimes were studied.
Book ChapterDOI
III–VI Compounds
TL;DR: Among the more than twenty binary compounds which can be formed between the group III and the group VI elements, only four are known to possess a layered structure as discussed by the authors, namely, GaS, GaSe, GaTe and InSe.
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Journal ArticleDOI
Solubility of ZnSe and ZnTe in Ga and In
P. Wagner,M.R. Lorenz +1 more
TL;DR: In this paper, T -X phase diagrams were determined which indicate a simple binary system behavior, and II-VI crystals were grown utilizing the data, and although heavily donor-doped, they exhibited relatively high resistivities. Attempts to uncompensate the donors resulted in the precipitation of the group III element.
Journal ArticleDOI
Dendritic growth of ZnS crystals
TL;DR: In this article, the dendritic growth of ZnS crystals in the form of long ribbons, plates and needles was observed when they were crystallized from liquid Ga. The cubic ribbons and plates propagated in the directions, the needles were hexagonal and their main propagation was parallel to the c-axis.