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Journal ArticleDOI

Temperature-Modulated Semiconductor Laser for Widely Tunable and Power-Controlled Operation.

Shudong Jiang, +1 more
- 15 Aug 1992 - 
- Vol. 31, Iss: 8, pp 2432-2434
TLDR
In this paper, a widely tunable, power-controlled oscillation method of AlGaAs semiconductor lasers in the visible region, based on temperature modulation by a microheater placed on the laser chip, is described.
Abstract
We describe a widely tunable, power-controlled oscillation method of AlGaAs semiconductor lasers in the visible region, based on temperature modulation by a microheater placed on the laser chip. The continuous frequency tuning range for a single-axial-mode operation is extended to 0.28 nm (132 GHz) at 779 nm by the heater current modulation. Cutoff frequency of the temperature modulation response is 50 Hz. The injection current is used mainly for the power control of the FM oscillation. By using a short external mirror for axial mode selection, the continuous tuning range is further increased to 0.49 nm (237 GHz), which corresponds to almost five times the value with the injection current modulation.

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Patent

Semiconductor laser and method of modulation

TL;DR: In this paper, coherent variation of at least two laser parameters can result in improved device performance, e.g., in pure amplitude or frequency modulation at frequencies substantially above 1 GHz, or in previously unattainable modulation frequencies.
References
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Proceedings ArticleDOI

Optical FM Heterodyne Interferometry For Range And Displacement Measurements

Kobayashi, +1 more
TL;DR: In this article, a frequency modulated (FM) heterodyne interferometer has been used for measuring the range and displacement of specular reflectors and diffuse surface objects using a FM semiconductor laser.
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