Journal ArticleDOI
The characteristics of AuGe-based ohmic contacts to n-GaAs including the effects of aging
TLDR
In this paper, the characteristics of Au:Ge, Ni/Au:Ge and Au/Ni/Ge metallizations were compared to ion-implanted and epitaxial n -GaAs layers on semi-insulting substrates.Abstract:
We have investigated and compared the characteristics of Au:Ge, Ni/Au:Ge and Au/Ni/Au:Ge ohmic contact metallizations to ion-implanted and epitaxial n -GaAs layers on semi-insulting substrates. Auger depth profiles of ohmic contacts and SEM of surface microstructures have provided significant insight as to the nature and degradation mechanism of ohmic contacts with aging. An electrolytic tank model with distributed resistors representing nodular or cluster form contacts has been successfully used to understand the effects of non-uniform ohmic contacts. A small degree of change in the semiconductor sheet resistance in the gaps between contacts, with aging at an elevated temperature, has been attributed to possible lateral surface diffusion of Au in the Au:Ge contacts and Ge in the Ni/Au:Ge and Au/Ni/Au:Ge contacts.read more
Citations
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Journal ArticleDOI
Development of refractory ohmic contact materials for gallium arsenide compound semiconductors
TL;DR: In this article, the authors developed low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found that the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance Ohmic contact formation.
Journal ArticleDOI
Development of ohmic contact materials for GaAs integrated circuits
TL;DR: In this article, the development of Ohmic contact materials for GaAs devices prepared by conventional evaporation and annealing techniques and the compatibility of these contact materials with highly integrated circuits are discussed.
Journal ArticleDOI
Formation, microstructure et résistances des contacts AuGe/n-GaAs, AuGe/n-InP, AuZn/p-InP et AuBe/p-InP
TL;DR: In this paper, the authors analyse the metallurgie des contacts AuGe/n-GaAs (12 wt.% Ge), AUGeAs and α-AuGa (13 at.% Ga) with temperatures between 320 and 450 °C and observe the formation du compose ternaire AuGeAs aux temperatures inferieures a 360 °C.
Journal ArticleDOI
Ohmic contacts to GaAs epitaxial layers
T.-J. Kim,P. H. Holloway +1 more
TL;DR: In this paper, it was shown that the "dopant diffusion model" is incorrect and instead, the solid phase regrowth model is sufficient to explain the formation of an n+ layer on GaAs to form the ohmic contact.
Journal ArticleDOI
Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAs
R. P. Gupta,W.S. Khokle +1 more
TL;DR: In this article, a new model based on gallium-vacancy-dependent diffusion of germanium into gallium arsenide is proposed to explain the ohmic behavior of an alloyed AuGeNi− n GaAs system.
References
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Journal ArticleDOI
The effects of contact size and non-zero metal resistance on the determination of specific contact resistance
Gregory S. Marlow,Mukunda B. Das +1 more
TL;DR: In this article, theoretical and experimental results concerning two sources of error in the determination of specific contact resistance of ohmic contacts to semiconductor device structures that utilize circular test patterns with varying gap length are presented.
Journal ArticleDOI
A review of the theory and technology for ohmic contacts to group III–V compound semiconductors
TL;DR: In this article, the basic principles of current transport in metal-semiconductor (Schottky barrier) contacts are presented, and the experimental techniques for fabricating ohmic contacts to III-V compound semiconductors are described.
Journal ArticleDOI
Specific contact resistance using a circular transmission line model
TL;DR: In this paper, the authors describe the application of the transmission line model to a contact test pattern of circular symmetry and show that using a circular test pattern, the mesa etch step necessary for the standard rectangular test pattern may be omitted, thus simplifying test pattern fabrication.
Journal ArticleDOI
Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs
TL;DR: In this paper, an experimental study of the alloying characteristics of a composite thin-film structure which is often used as an ohmic contact to GaAs is presented, and the specific contact resistance of the Ni/AuGe/GaAs system is measured for a wide range of alloy temperatures and times.
Journal ArticleDOI
Alloying behavior of Ni/Au‐Ge films on GaAs
TL;DR: In this article, a microprobe Auger spectrometer and an x-ray diffractometer were used to investigate the alloying behavior of thin Ni/Au-Ge films on a GaAs substrate.