Journal ArticleDOI
Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs
TLDR
In this paper, the interface structures resulting from the alloying reactions between a Au/Ni/Au-Ge composite film and a (100) GaAs substrate were studied by transmission electron microscopy and scanning transmission electron microscope.Abstract:
The interface structures resulting from the alloying reactions between a Au/Ni/Au‐Ge composite film and a (100) GaAs substrate were studied by transmission electron microscopy and scanning transmission electron microscopy. Electron microscope examinations of the cross‐sectional samples prepared in this study offered excellent lateral and depth resolution of local structures which are not available by other analytical techniques used previously in similar studies. The distributions and chemical compositions of various phases formed, and the morphologies of the interfaces between these phases were monitored and compared with the measured contact resistances at three different stages of alloying. A correlation between the interface structure and the contact resistance was found.read more
Citations
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Journal ArticleDOI
Development of refractory ohmic contact materials for gallium arsenide compound semiconductors
TL;DR: In this article, the authors developed low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found that the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance Ohmic contact formation.
Journal ArticleDOI
Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds
TL;DR: In this paper, the formation of NiSi films from the reaction of Ni2Si with (100) and (111) silicon substrates was found to be controlled by a lattice diffusion process with an activation energy of 1.70 eV.
Journal ArticleDOI
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
E. D. Marshall,B. Zhang,L. C. Wang,P. F. Jiao,W. X. Chen,T. Sawada,S. S. Lau,Karen L. Kavanagh,Thomas F. Kuech +8 more
TL;DR: In this paper, a low resistance nonalloyed ohmic contact to n−GaAs is formed which utilizes the solid-phase epitaxy of Ge through PdGe, and the conditions necessary to attain low specific contact resistivity (∼10−6 Ω cm2 on 1018 cm−3 n-GaAs) and on the interfacial morphology between the contact metallization and the GaAs substrate.
Journal ArticleDOI
Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs
TL;DR: In this article, a cross-sectional transmission electron microscopy was used to explore the uniformity at the metal/GaAs interface and the thermal stability of the AuNiGe contact after the ohmic contact formation.
Journal ArticleDOI
Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies
TL;DR: In this article, the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480°C were investigated by applying high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x-rays in the scanning TEM and Rutherford backscattering spectrometry.
References
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Journal ArticleDOI
Alloyed ohmic contacts to GaAs
TL;DR: In this article, it is suggested that the observed (doping)−1 dependence of the contact resistance is due to spreading resistance domination of current paths through submicron regions where heavy doping occurs.
Journal ArticleDOI
Metal-semiconductor contacts for GaAs bulk effect devices
TL;DR: An alloy of Au, Ge and Ni has been shown to produce uniform linear electrical contacts to GaAs over a resistivity range useful for bulk effect devices as discussed by the authors, and the preparation of the contact materials, surface treatment of the GaAs, and device fabrication procedures are described.
Journal ArticleDOI
Alloying behavior of Ni/Au‐Ge films on GaAs
TL;DR: In this article, a microprobe Auger spectrometer and an x-ray diffractometer were used to investigate the alloying behavior of thin Ni/Au-Ge films on a GaAs substrate.
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Nonalloyed Ohmic contacts to n‐GaAs by molecular beam epitaxy
P. A. Barnes,A. Y. Cho +1 more
TL;DR: In this paper, the formation of Ohmic contacts to n-GaAs without the need for a high-temperature alloy was reported. But the authors did not consider the effect of high temperature on the contact resistance.
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Investigation of the AuGeNi system used for alloyed contacts to GaAs
TL;DR: In this article, the authors studied the interaction of these three elements upon heat treatment using an inert substrate and found that Ni acts as a sink for Ge in that the Ge diffuses out of the Au, with which it is usually coevaporated, into the Ni layer where it forms stable compounds.