Journal ArticleDOI
The Green Laser Diode: Completing the Rainbow
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TLDR
In this article, several companies and research groups have found ways to fill the green gap by mastering the epitaxy of high-indium-containing quantum wells, balancing strain and defect formation against the quantum-confined Stark effect.Abstract:
Traditionally, green laser diodes have been difficult to construct due to the
characteristics of the quantum wells that serve as their gain region. Now, however,
several companies and research groups have found ways to fill this “green gap,” by
mastering the epitaxy of high-indium-containing quantum wells, balancing strain and
defect formation against the quantum-confined Stark effect and using optimized
waveguides. Their work is driving new applications in consumer electronics,
biophotonics and other areas.read more
Citations
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Journal ArticleDOI
GaN-based green laser diodes
Lingrong Jiang,Jianping Liu,Aiqin Tian,Yang Cheng,Zengcheng Li,Liqun Zhang,Shuming Zhang,Deyao Li,Masao Ikeda,Hui Yang +9 more
TL;DR: In this article, the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done.
Journal ArticleDOI
Design and growth of GaN-based blue and green laser diodes
TL;DR: In this article, the challenges and progress of GaN-based blue and green laser diodes are reviewed from the aspects of epitaxial growth and layer structure design, and considerable effort is required to improve the quality of InGaN multiple quantum well (MQW) gain medium for blue and especially green LDs.
Journal ArticleDOI
Review—Review on Optimization and Current Status of (Al,In)GaN Superluminescent Diodes
Journal ArticleDOI
Influence of substrate misorientation on carbon impurity incorporation and electrical properties of p-GaN grown by metalorganic chemical vapor deposition
Lingrong Jiang,Lingrong Jiang,Jianping Liu,Jianping Liu,Aiqin Tian,Xiaoyu Ren,Siyi Huang,Wei Zhou,Liqun Zhang,Deyao Li,Shuming Zhang,Masao Ikeda,Hui Yang,Hui Yang +13 more
TL;DR: In this article, the influence of substrate misorientation angle on carbon impurity incorporation and electrical properties of p-GaN grown at a low temperature of 900 °C has been explored.
Journal ArticleDOI
450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers
Kei Arakawa,Kohei Miyoshi,Ryosuke Iida,Yuki Kato,Tetsuya Takeuchi,Makoto Miyoshi,Satoshi Kamiyama,Motoaki Iwaya,Isamu Akasaki,Isamu Akasaki +9 more
TL;DR: In this paper, a low threshold current density (1.15 kA cm−2) of a GaInN ridge stripe laser diode containing a 3-pair 40 nm Al0.82In0.97N multiple bottom cladding layer at room temperature under pulsed condition was demonstrated.