Journal ArticleDOI
THE GROWTH OF MAGNESIUM-DOPED GaAs BY THE OM-VPE PROCESS
TLDR
Magnesium-doped GaAs has been grown by organometallic vapor phase epitaxy (OM-VPE) as discussed by the authors, and the material is of high electrical and optical quality; controllable doping over the range 1015 to 1019cm-3 is reproducibly attained.Abstract:
Magnesium-doped GaAs has been grown by organometallic vapor phase epitaxy (OM-VPE). Bis (cyclopentadienyl) mag-nesium (Cp2Mg) is used as the organometallic precursor to Mg. The epitaxial layers have been characterized by resis-tivity and Hall measurements, photoluminescence spectro-scopy and optical microscopy. The material is of high electrical and optical quality; controllable doping over the range 1015 to 1019cm-3 is reproducibly attained. The ionization energy of the Mg acceptor is determined to be 30 ± 2.5 meV at 77K. Negligible compensation is observed, consistent with clean thermolysis of the Cp2Mg under growth conditions. GaAs diodes have been fabricated using Mg as the p-dopant and either Se, Si, or Sn as the n-dopant. The diodes show very low leakage currents under reverse bias, even at relatively high doping levels. Degenerately-doped junctions for interconnecting monolithic cascade concentrator solar cells have also been successfully grown, displaying forward conductivities as high as 19 amps V−1 cm-2 at 0.05V forward bias.read more
Citations
More filters
Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TL;DR: In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.
Patent
Blue light-emitting diode with degenerate junction structure
TL;DR: In this paper, a light emitting diode is proposed that emits light in the blue region of the visible spectrum with increased brightness and efficiency, and the diode comprises an n-type silicon carbide substrate, an n -type top layer, and a light-emitting p-n junction structure.
Journal ArticleDOI
History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes
R.D. Dupuis,Michael R. Krames +1 more
TL;DR: The development of high-performance visible-spectrum light-emitting diodes (LEDs) has occurred over a period of over 60 years, beginning with the discovery of the first semiconductor p-n junction in 1940, the development of solid-state electronic band theory in the 1940s, the invention of bipolar transistor in 1947, and the demonstration of efficient light generation from III-V alloys in the 1950s and 1960s.
Journal ArticleDOI
Metal-organic vapor phase epitaxy of compound semiconductors
TL;DR: The metal-organic vapor phase epitaxy (MOVPE) technique is emerging as the technique of choice in many applications to produce such exacting structures as mentioned in this paper, and the growth of epitaxial materials in the MOVPE technique is typically accomplished by the coreaction of reactive metal alkyls with a hydride of the non-metal component.
Journal ArticleDOI
Metalorganic precursors for vapour phase epitaxy
TL;DR: In this article, the use of metalorganic compounds in a variety of MOVPE and CBE applications is reviewed with emphasis on precursor chemistry in the gas phase and at the growth surface.
References
More filters
Book
Solid state electronic devices
TL;DR: The Solid State Electronic Devices (SSED) as discussed by the authors is an introductory book on semiconductor materials, physics, devices, and technology, which aims to: 1) develop basic semiconductor physics concepts, and 2) provide a sound understanding of current semiconductor devices and technology.
Book
Dangerous properties of industrial materials
TL;DR: In this paper, hazard analysis information for nearly 13,000 common industrial and laboratory materials is provided in a single source and hazard analysis is performed for each of these materials using hazard analysis tools.
Journal ArticleDOI
Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
TL;DR: In this paper, the performance of Be-doped Al0.3Ga0.7As and AlxGa1-xAs was investigated in MBE growth of III-V compounds.
Journal ArticleDOI
GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells
TL;DR: In this paper, the growth and characterization of tunneling GaAs homojunctions and GaAs−AlGaAs heterojunctions by molecular beam epitaxy for use as optically transparent interconnects in GaAs and AlGaAs solar cells is described.