Journal ArticleDOI
The identification of a grain-boundary phase in hot-pressed silicon nitride by Auger electron spectroscopy
B. D. Powell,P. Drew +1 more
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In this article, the presence of magnesium, calcium and oxygen has been detected in the intergranular fracture surface of an Si3N4-7% MgO hot-pressed material by Auger electron spectroscopy, together with a chemical shift in the silicon Auger peak.Abstract:
The presence of magnesium, calcium and oxygen has been detected in the intergranular fracture surface of an Si3N4-7% MgO hot-pressed material by Auger electron spectroscopy, together with a chemical shift in the silicon Auger peak. The composition of this grain-boundary phase has been estimated as (0.40 ± 0.03) CaO. (0.75 ± 0.10) MgO. 2SiO2 by comparison with spectra obtained from a bulk glass specimen of similar composition. The reduction in strength of the hot-pressed material at temperatures above 1000° C has been attributed to the decrease in viscosity of this phase.read more
Citations
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Journal ArticleDOI
On the Equilibrium Thickness of Intergranular Glass Phases in Ceramic Materials
TL;DR: In this paper, it was shown that there will exist a stable thickness for the intergranular film and that it will be of the order of 1 nm, a value commensurate with that observed experimentally in a wide range of materials.
Journal ArticleDOI
On the detection of thin intergranular films by electron microscopy
TL;DR: The presence of very thin (6-50 A) films in integrated circuits and separating crystalline grains in ceramics, notably in zinc oxide varistors and in silicon nitride, has been reported using high resolution electron microscopy as mentioned in this paper.
Journal ArticleDOI
Hot-pressing and the ?-? phase transformation in silicon nitride
TL;DR: In this article, the authors measured the kinetics of densification and the phase transformation in hot-pressing of silicon nitride ceramics using magnesia as additive, and found that the rate was proportional to the amount of additive.
Journal ArticleDOI
Pressure sintering of Si3N4
TL;DR: In this article, the sintering process was inferred to be liquid-phase Sintering and divided into two processes; rearrangement and solution-precipitation.
Journal ArticleDOI
The formation of single-phase Si-Al-O-N ceramics
TL;DR: In this article, microstructures for this composition are essentially single phase, consiting of non-faceted, sub-micron, β′ grains with a grain-boundary segregate layer of glass-forming silicate composition, containing impurity and additive metal ions.
References
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Journal ArticleDOI
Electron‐irradiation effect in the Auger analysis of SiO2
TL;DR: In this article, the principal features in the Auger electron spectrum from a SiO2 surface are presented, and the effects of these parameters on the dissociation have been studied.
Journal ArticleDOI
The microstructures of silicon nitride ceramics during hot-pressing transformations
P. Drew,M. H. Lewis +1 more
TL;DR: In this article, the microstructure of silicon nitride hot-pressed with a magnesium oxide additive has been studied by transmission electron microscopy, and the observations substantiate a solid/liquid/solid transformation mechanism, whereby Si and N are transported from α grains through a silicate liquid phase to nucleation sites for β at α/liquid interfaces or to β grains nucleated homogeneously in the liquid phase.
Journal ArticleDOI
The microstructure of hot-pressed silicon-nitride
TL;DR: In this paper, the distribution of impurities and inclusions, phases and dislocation structures in two grades of hot-pressed Si3N4 were investigated by means of replica and thin foil transmission microscopy, and by X-ray diffraction, microprobe and Auger analyses.
Journal ArticleDOI
Auger electron spectroscopy
TL;DR: Auger spectroscopy has progressed from its initial use as a purely research tool to that of an analytical technique of general application wherever information about the composition of non-volatile surfaces is important.
Journal ArticleDOI
A study of the nitridation of silicon surfaces by low-energy electron diffraction and auger electron spectroscopy
R Heckingbottom,P.R Wood +1 more
TL;DR: In this paper, the growth of an impurity induced nitride structure, which is common to both Si(111) and Si(311) surfaces, is explained if the nucleation and orientation of the niti ide are determined by the geometry of localised sites.
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