Journal ArticleDOI
Thermal stresses in heteroepitaxial beta silicon carbide thin films grown on silicon substrates
H. P. Liaw,Robert F. Davis +1 more
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This article is published in Journal of The Electrochemical Society.The article was published on 1984-12-01. It has received 59 citations till now. The article focuses on the topics: Nanocrystalline silicon & Silicon.read more
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Raman spectra of epitaxial graphene on SiC(0001)
TL;DR: In this paper, the Raman spectra of epitaxial graphene layers grown on 63×63 reconstructed silicon carbide surfaces during annealing at elevated temperature are presented, and a significant phonon hardening is observed.
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Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures
B.E. Williams,Jeffrey T. Glass +1 more
TL;DR: In this paper, the surface morphology of the diamond films was a function of position on the sample surface and the methane concentration in the feedgas, which was determined to be similar to natural diamond in terms of composition, structure, and bonding.
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Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si
TL;DR: Raman scattering studies for a series of CVD-grown cubic SiC single-crystal films with film thickness from 600 A to 17 microns are discussed in this article, where the results suggest that the crystalline orientations of the Si substrate and the 3C-SiC film are the same.
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Low‐temperature photoluminescence studies of chemical‐vapor‐deposition‐grown 3C‐SiC on Si
TL;DR: In this article, low-temperature photoluminescence studies of 26 cubic SiC films, ranging in thickness from 600 A to 25 microns, grown by CVD on (100)Si are presented.
Journal ArticleDOI
Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system
TL;DR: In this article, a set of formulas for a generalized axial stress in diamond and zinc-blende semiconductors under axial stresses is derived to calculate stress-related Raman shifts.