Journal ArticleDOI
Thermal Transients in Electronic Packages
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TLDR
In this article, simplified expressions have been obtained for the calculation of chip and module thermal transients which, when superimposed, characterize the total package time/temperature response, and the thermal time constants are also presented in graphical form using parameters easily obtainable by the design engineer.Abstract:
The use of a transient analysis to accurately characterize the operating temperature of electronic modules should result in lower temperature estimates. This will reflect increases in both the reliability estimates and the performance specifications. An accurate cooling analysis would also enhance the projected product life or reduce the system cooling requirements. Simplified expressions have been obtained for the calculation of chip and module thermal transients which, when superimposed, characterize the total package time/temperature response. Empirical data demonstrate the validity of the assumptions used to obtain these expressions. The thermal time constants are also presented in graphical form using parameters easily obtainable by the design engineer (e.g., cooling air velocity, steadystate temperature differences, and module location) so that order of magnitude assessments can be made.read more
Citations
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Journal ArticleDOI
A review of phase change materials for vehicle component thermal buffering
TL;DR: The use of latent heat thermal energy storage for thermally buffering vehicle systems is reviewed in this article, where the authors identify material candidates for each vehicle system based on system temperature, specific and volumetric latent heat and thermal conductivity.
Journal ArticleDOI
An Overview of Non-Destructive Testing Methods for Integrated Circuit Packaging Inspection.
TL;DR: The article provides a review of the state-of-art non-destructive testing methods used for evaluation of integrated circuit (IC) packaging identifying various types of the defects and the capabilities of most common NDT methods employed for defect detection.
Proceedings Article
Thermal analysis of integrated circuit chips using a thermographic imaging technique
TL;DR: In this paper, the authors presented the analysis of the thermal gradients on the substrate of an integrated-circuit chip (telephone line interface chip) using thermographic imaging techniques.
Journal ArticleDOI
Transient thermal management of portable electronics using heat storage and dynamic power dissipation control
TL;DR: In this paper, a transient thermal management strategy that enables chip sets with high peak power dissipation to be used in electronic systems with low heat removal rate is proposed, which facilitates much higher burst mode workload processing performance than is possible with conventional low power designs based on static thermal management techniques.
Journal ArticleDOI
Thermal analysis of integrated-circuit chips using thermographic imaging techniques
TL;DR: In this paper, the authors presented the analysis of the thermal gradients on the substrate of an integrated-circuit chip (telephone line interface chip) using thermographic imaging techniques.
References
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Journal ArticleDOI
Diffusion through composite media
G.P. Mulholland,M.H. Cobble +1 more
TL;DR: In this article, the diffusion equation for the temperature distribution in each of k sections of a composite with internal heat generation and either heating, cooling or perfect thermal contact at the k − 1 interfaces is solved.
Journal ArticleDOI
Transient Thermal Analysis of Solid-State Power Devices--Making a Dreaded Process Easy
TL;DR: In spite of its importance in the rating and reliable application of power diodes and thyristors, the computation of instantaneous junction temperature has been a poorly understood and generally dreaded process among equipment designers as mentioned in this paper.
Journal ArticleDOI
Dissipation in Solid-State Devices--The Magic of I l + N
TL;DR: The capacity of a solid-state device, as ordinarily rated, varies widely depending on the current waveform, duty cycle, case temperature, etc. The underlying junction temperature limits should, however, be invariant as discussed by the authors.
Journal ArticleDOI
Safe operating area for bipolar transistors
TL;DR: In this article, a mathematical model is utilized to predict the safe operating area (SOA) for proper circuit applications of bipolar transistors in the forward as well as reverse operating regions, where nonuniformity of the temperature within the transistor structure due to internal self-heating and the avalanche multiplication effect in the reverse operating region, which causes second breakdown failure, are taken into account.
Journal ArticleDOI
Thermal Response of Microwave Transistors Under Pulsed Power Operation
TL;DR: In this article, the transient temperature response and thermal profiles near the junction of a transistor or other semiconductor device are accurately predicted through the use of computeraided simulation, however, these response characteristics are nearly impossible to measure experimentally.