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Journal ArticleDOI

THERMOCHROMIC MOLECULES WITH BONDS OF Se OR Te AND Sb OR Bi

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TLDR
In this paper, the synthesis and properties of stibino or bismuthino selenides or tellurides of the types R2EE'R, (R2E)2E'R and RE(E"R)2; E = Sb, Bi; E' = Se, Te; R = CH3, C2H5, C6H5 are described.
Abstract
The syntheses and properties of stibino or bismuthino selenides or tellurides of the types R2EE'R, (R2E)2E'R, RE(E'R)2; E = Sb, Bi; E' = Se, Te; R = CH3, C2H5, C6H5 are described Reversible change of color with variation of temperature (thermochromism) is observed in the case of (CH3)2SbTeCH3, (C2H5)2SbTeCH3, [(CH3)2Sb]2Se and [(CH3)2Sb]2Te

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Journal ArticleDOI

Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity

TL;DR: In this article, a series of alkylchalcogenostibines, Me2SbSenBu, MeSb(SenBu)2, Sb(SbSe3), Sb2Te3, SenBu)3 and TenBu2, have been designed and synthesized as potential precursors for chemical vapour deposition (CVD) by reaction of nBuELi (E = Se, Te) with the appropriate halostibine, Me3−nSbCln (n = 1, 2, 3),
Patent

Metal heterocyclic compounds for deposition of thin films

TL;DR: In this paper, a metal is deposited on a substrate through a deposition process to form a thin film on the substrate, and a metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C.
Journal ArticleDOI

Wet-chemical synthesis of different bismuth telluride nanoparticles using metal organic precursors – single source vs. dual source approach

TL;DR: A dual source approach (hot injection method) using the reaction of Te(SiEt3)2 and Bi(NMe2)3 was applied for the synthesis of different pure Bi-Te phases including Bi2Te, Bi4Te3 and Bi2 Te3, which were characterized by PXRD, REM, TEM and EDX.
Patent

Tellurium precursors for film deposition

Abstract: Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100°C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.
Journal ArticleDOI

Antimony sources for MOCVD. The use of Et4Sb2 as a p-type dopant for Hg1−xCdxTe and crystal structure of the adduct [Et4Sb2 · 2CdI2]n

TL;DR: Tetraethyldistibine, Et 4 Sb 2, a new antimony source for MOCVD is evaluated as mentioned in this paper, which is shown to be a useful and safe dopant feedstock for low temperature growth of p-type Hg 1- x Cd x Te.
References
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Journal ArticleDOI

The exchange reaction of tetramethyldipnictogens with dimethyldichalcogenides

TL;DR: Tetramethyldipnictogens Me4E2 (E = P, As, Sb, Bi) undergo exchange reactions with dimethyldichalcogenides Me2A2 (A = S, Se, Te) to produce the corresponding Me2EAMe.
Journal ArticleDOI

Syntheses of distiba-selenanes, -telluranes and a tellurostibane

TL;DR: In this paper, the reaction of the distibanes R 4 Sb 2 (R= CH 3, C 2 H 5 ) with selenium or tellurium respectively produces the corresponding distiba-selenanes and -telluranes R 2 SbESbR 2 (E = Se, Te).
Journal ArticleDOI

Reaktionen von Tetrapropyldibismutan mit Chalkogenen und Tetramethyldistiban / Reactions of Tetrapropyldibism uthane with Chalcogens and Tetramethyldistibane

TL;DR: In this article, Bis(dipropylbismuth)oxide, -sulfide, -selenide and -telluride are obtained by reactions of tetra propyldibismuthane with elem entaloxygen, sulfur, selenium or tellurium.