D
Douglas A. Buchanan
Researcher at University of Manitoba
Publications - 124
Citations - 6891
Douglas A. Buchanan is an academic researcher from University of Manitoba. The author has contributed to research in topics: Silicon & Gate dielectric. The author has an hindex of 36, co-authored 124 publications receiving 6724 citations. Previous affiliations of Douglas A. Buchanan include Applied Science Private University & University of Windsor.
Papers
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Journal ArticleDOI
CMOS scaling into the nanometer regime
Yuan Taur,Douglas A. Buchanan,Wei Chen,David J. Frank,Khalid EzzEldin Ismail,Shih-Hsien Lo,George Anthony Sai-Halasz,R. Viswanathan,Hsing-Jen Wann,Shalom J. Wind,Hon-Sum Philip Wong +10 more
TL;DR: In this article, the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations are discussed, including power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays.
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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.
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Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
Evgeni Gusev,Eduard A. Cartier,Douglas A. Buchanan,M Gribelyuk,Matthew Copel,Harald F. Okorn-Schmidt,Christopher P. D'Emic +6 more
TL;DR: An overview of recent work on ultrathin (, 100 A) films of metal oxides deposited on silicon for advanced gate dielectrics applications is presented in this article, where the authors illustrate the 23 2 2 2 3 complex processing, integration and device related issues for high dielectric constant ('high-K') materials.
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Scaling the gate dielectric: materials, integration, and reliability
TL;DR: A review of the more "fundamental" concerns regarding the scaling of the gate dielectric in the ultrathin regime is presented and a methodology is presented to calculate device and chip lifetimes for MOS structures on the basis of data extracted from voltage- and temperature-accelerated measurements.
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Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
TL;DR: In this article, it was shown that atomic hydrogen can simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H 0→Pbin+H2.