Patent
Thin film etching method
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TLDR
In this paper, a Ga-In-Zn-O-O (GINZN-O) thin film etching method was proposed, where the mask layer was used as an etch barrier.Abstract:
Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.read more
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References
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Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
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Method of dry etching oxide semiconductor film
TL;DR: In this article, a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn was proposed, provided that the halogen-based gas is available.
Patent
Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
TL;DR: In this article, a thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer on the other face of channel layer was presented.
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Semiconductor device and manufacturing method therefor
Fukui Yasuki,Namii Atsuya +1 more
TL;DR: In this paper, the authors proposed a semiconductor device where a plurality of semiconductor chips are formed on a substrate for sure insulation, and an insulating layer 5 is formed between the second bonding wires 4 and the first semiconductor chip 1.
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Method of patterning a transparent conductor
Shinji Miyagaki,Seigen Ri +1 more
TL;DR: In this article, a two-step etching method is employed, in which the transparent conducting film is wet-etched by an aqueous solution of a halogenide and thereafter an interfacial reacted layer generated at the interface of the transparent film and substrate including Si is etched by a plasma etching.