Patent
Thin film transistor and method of manufacturing the same, and flat panel display device having thin film transistor
Tae-kyung Ahn,Hyun-Joong Chung,Jae Kyeong Jeong,Jong-Han Jeong,Kwang-Suk Kim,Minkei Kin,Yeon Gon Mo,Jin-Seong Park,Hui-Won Yang +8 more
Reads0
Chats0
TLDR
In this paper, the authors proposed a thin film transistor that uses an oxide semiconductor as an active layer, and provided a method of manufacturing the same, and to provide a flat panel display device having the thin-film transistor.Abstract:
PROBLEM TO BE SOLVED: To provide a thin film transistor that uses an oxide semiconductor as an active layer, to provide a method of manufacturing the same, and to provide a flat panel display device having the thin film transistor. SOLUTION: The thin film transistor includes: an oxide semiconductor layer formed on a substrate and having a channel region, a source region, and a drain region; a gate electrode insulated from the oxide semiconductor layer by a gate insulating layer; an ohmic contact layer formed on the source region and the drain region of the oxide semiconductor layer; and a source electrode and a drain electrode respectively coupled to the source region and the drain region through the ohmic contact layer, wherein the ohmic contact layer is formed of a metal having a lower work function than work functions of the source electrode and the drain electrode. COPYRIGHT: (C)2010,JPO&INPITread more
Citations
More filters
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Semiconductor device and display device
Hajime Kimura,Shunpei Yamazaki +1 more
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Patent
Thin film transistor, method of manufacturing the same, and flat panel display device having the same
Min-Kyu Kim,Jong-Han Jeong,Tae-kyung Ahn,Jae Kyeong Jeong,Yeon-Gon Mo,Jin-Seong Park,Hyun-Joong Chung,Kwang-Suk Kim,Hui-Won Yang +8 more
TL;DR: In this paper, a thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device has been presented.
Patent
Display device and manufacturing method thereof
Junya Maruyama,Shunpei Yamazaki +1 more
TL;DR: In this paper, a display device including a transistor showing extremely low off current is shown, in which a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the material is reduced.
Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
References
More filters
Patent
Thin-film transistor
Tomoji Kawai,Kitamura Takeshi,Satoshi Masuda,Shigehiro Miyatake,Yoshihiro Okumura,Hitoshi Tabata,健 北村,敏 増田,佳弘 奥村,茂博 宮武,知二 川合,仁 田畑 +11 more
TL;DR: In this paper, a thin film transistor with a ZnO film as active layer is presented, which suppresses a leak current of a gate insulating film and obtains good transistor characteristics.
Patent
Organic electroluminescent display device
TL;DR: An organic electroluminescent display device includes at least a driving TFT and pixels which are formed by organic EH elements and are provided on a substrate of the TFT.
Patent
Semiconductor devices utilizing amorphous oxide
TL;DR: In this paper, a semiconductor device consisting of a P-type region and an N-type area is presented. But the electron mobility increases with the electron carrier concentration as the electron density increases.
Patent
Thin film transistor array, method for manufacturing the same, and liquid crystal display device
TL;DR: In this article, the oxide semiconductor film is exposed through the opening to reducing plasma or plasma containing doping elements to simultaneously decrease the resistance in the connection terminals 18, 17, the source-drain parts 15, 16 and the pixel electrode 13.
Patent
Thin-film transistor
TL;DR: In this article, the authors proposed a thin-film transistor with sufficient transistor characteristics and using an organic semiconductor material in which costs for an electrode material are low, where the source and drain electrodes are respectively composed of at least a contact part contacting with the semiconductor layer and a non-contact part other than the contact part.