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Journal ArticleDOI

Transfer characteristic of IM/sub 3/ relative phase for a GaAs FET amplifier

Noriharu Suematsu, +2 more
- 01 Dec 1997 - 
- Vol. 45, Iss: 12, pp 2509-2514
TLDR
In this paper, the transfer characteristic of relative phase of the third-order intermodulation distortion (IM/sub 3/) of a GaAs FET amplifier is measured and analyzed.
Abstract
The transfer characteristic of relative phase of the third-order intermodulation distortion (IM/sub 3/) of a GaAs FET amplifier is measured and analyzed. The measurement system and method are also described. For drives in the weakly nonlinear region, the measured relative phase of IM/sub 3/ is equal to that of the carrier and is in agreement with the analysis results using Volterra-series representation. For drives in the saturation region, the measured relative phase of IM/sub 3/ versus the input power moves drastically compared with that of the carrier and is in agreement with numerical analysis using discrete Fourier transform. Comparison between measured and analytical results shows the drastic move of IM/sub 3/ relative phase is caused by the generation of IM/sub 3/ due to AM-PM conversion. The measured results and the measurement method are useful for the design and adjustment of predistortion-type linearizers for GaAs FET high-power amplifiers.

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Citations
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Behavioral modeling of nonlinear RF power amplifiers considering memory effects

TL;DR: In this article, the authors proposed a behavioral model to treat memory effects in nonlinear power amplifiers (PAs) by augmenting the memory polynomial model with a sparse delay tap structure that reduces the parameter space required for accurate model identification.
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Analog predistortion linearizer for high-power RF amplifiers

TL;DR: In this article, an analog predistortion linearizer for a high-power amplifier of a code-division multiple access (CDMA) base station was developed, which can cancel the third and fifth intermodulation distortions independently.
Proceedings ArticleDOI

Analog predistortion linearizer for high power rf amplifier

TL;DR: In this paper, an analog pre-distortion linearizer for the high power amplifier of CDMA base station was developed to suppress the spectral regrowth in the adjacent channel effectively, the odd order intermodulation distortions should be cancelled.
Proceedings ArticleDOI

Phase detrending for measured multisine signals

TL;DR: A method to detrend the phases of measured multisine signals is developed that finds a time reference that removes the linear component of the measured phases and aligns them, within a precision specified by the user, to their expected values.
Journal ArticleDOI

Measurement of two-tone transfer characteristics of high-power amplifiers

TL;DR: In this article, the amplitude and phase data of the two-tone fundamental, third-order intermodulation, and fifth-order Intermodulation components versus input power level were measured.
References
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Journal ArticleDOI

Investigation of multiple f.m./f.d.m. carriers through a satellite t.w.t. operating near to saturation

TL;DR: In this article, it was shown that the performance is essentially determined by the third-order f1+f2?f3 type products for drives up to saturation, and that at the optimum backoff of about 2dB the satellite telephone capacity, when operating to earth stations having a figure of merit of 39.3dB and a rain margin of 4dB, will be about 1300 telephone circuits.
Proceedings ArticleDOI

A novel series diode linearizer for mobile radio power amplifiers

TL;DR: In this paper, a series diode linearizer was developed for mobile radio power amplifiers, which provided positive amplitude and negative phase deviations with the increase of input power, and can compensate AM-AM and AM-PM distortions of power amplifier.
Journal ArticleDOI

Novel linearizer using balanced circulators and its application to multilevel digital radio systems

TL;DR: In this article, a miniaturized RF predistortion linearizer for a GaAs field effect transistor power amplifier applicable to 256 quadrature-amplitude modulation (QAM) digital microwave systems is presented.
Journal ArticleDOI

Third-Order Intermodulation Distortion and Gain Compression in GaAs Fet's

TL;DR: In this paper, a simple unilateral nonlinear circuit model of a GaAs FET is used in the analysis of the third-order intermodulation distortion and gain compression characteristics of a single-stage amplifier.
Journal ArticleDOI

Calculation of Intermodulation from a Single Carrier Amplitude Characteristic

TL;DR: The intermodulation analysis presented in this paper is based on the important observation that any output component of a memoryless nonlinear device can be expressed as an integral of the product of two functions.
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