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Journal ArticleDOI

A comprehensive explanation of distortion sideband asymmetries

N. Borges de Carvalho, +1 more
- 07 Nov 2002 - 
- Vol. 50, Iss: 9, pp 2090-2101
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TLDR
In this paper, a comprehensive study of intermodulation-distortion response asymmetries often observed in microwave nonlinear systems subject to a two-tone or multitone test is presented.
Abstract
This paper presents a comprehensive study of intermodulation-distortion response asymmetries often observed in microwave nonlinear systems subject to a two-tone or multitone test. The reasons for the different amplitudes of the two adjacent tones are first investigated under small- and large-signal regimes, using a general circuit with frequency-dependent embedding impedances and resistive and reactive nonlinearities. It is shown that this intriguing phenomenon can be mainly attributed to the terminating impedances at the baseband or difference frequencies. Multitone behavior is also addressed and its main differences from the two-tone case explained. Those theoretical conclusions are then extrapolated for real circuits and validated by measured results obtained from microwave power amplifiers of two different technologies, i.e., a GaAs MESFET and an Si bipolar junction transistor.

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Citations
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A comparative overview of microwave and wireless power-amplifier behavioral modeling approaches

TL;DR: A classification of the various PA behavioral models is proposed, discussing their abilities to represent the different effects observed in practical circuits and how it was possible to integrate a wide range of behavioral modeling activities.
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A comparative analysis of behavioral models for RF power amplifiers

TL;DR: The models with memory, PH, and RBFNN, showed better cross-validation performance, in terms of lower model errors, than a static polynomial for the hardest cross validation of the 2G PA.
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Behavioral modeling of nonlinear RF power amplifiers considering memory effects

TL;DR: In this article, the authors proposed a behavioral model to treat memory effects in nonlinear power amplifiers (PAs) by augmenting the memory polynomial model with a sparse delay tap structure that reduces the parameter space required for accurate model identification.
Journal ArticleDOI

Linearization Techniques for CMOS Low Noise Amplifiers: A Tutorial

TL;DR: This tutorial catalogues and analyzes previously reported CMOS low noise amplifier (LNA) linearization techniques and highlights the impact of CMOS technology scaling on linearity and outlines how to design a linear LNA in a deep submicrometer process.
References
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Book

High-Linearity RF Amplifier Design

TL;DR: This is the first single comprehensive guide to examine and directly compare all major RF power amplifier linearization techniques in detail and save you valuable design time while helping to avoid costly design errors.
Journal ArticleDOI

Measurement and simulation of memory effects in predistortion linearizers

TL;DR: In this article, the effects of memory effects on linearizers and amplifiers are investigated in broadband applications, where high efficiency and linearity are required and where memory effects, if not detected and properly corrected, may significantly degrade the system's performance.
Journal ArticleDOI

Large- and small-signal IMD behavior of microwave power amplifiers

TL;DR: In this paper, the large-signal intermodulation distortion (IMD) sweet spots in microwave power amplifiers are studied and predicted using a new mathematical basis, and the variations in the IMD versus drive pattern with active bias point and the terminating matching networks are investigated.
Journal ArticleDOI

On the use of multitone techniques for assessing RF components' intermodulation distortion

TL;DR: A comprehensive analysis of various techniques currently used for assessing microwave components' nonlinear distortion behavior is presented in this paper, where the output of a third-order system subject to a two- or three-tone input is given, and then used as the comparison reference for studying the response to a general multitone or random excitation.
Proceedings ArticleDOI

Effect of out-of-band terminations on intermodulation distortion in common-emitter circuits

TL;DR: In this paper, the results of Volterra series analysis of the third-order intermodulation distortion in common-emitter circuits were presented, and the derived closed-form expression showed how out-of-band source and load impedances affect the distortion.