Patent
Transistor having an asymmetric source/drain and halo implantation region and a method of forming the same
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TLDR
By providing an asymmetric design of a halo region and extension regions of a field effect transistor, the transistor performance may significantly be enhanced for a given basic transistor architecture as discussed by the authors, where a large overlap area may be created at the source side with a steep concentration gradient of the PN junction, whereas the drain overlap may be significantly reduced or may even completely be avoided.Abstract:
By providing an asymmetric design of a halo region and extension regions of a field effect transistor, the transistor performance may significantly be enhanced for a given basic transistor architecture. In particular, a large overlap area may be created at the source side with a steep concentration gradient of the PN junction due to the provision of the halo region, whereas the drain overlap may be significantly reduced or may even completely be avoided, wherein a moderately reduced concentration gradient may further enhance the transistor performance.read more
Citations
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References
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Patent
Method of manufacturing semiconductor device
Nii Koji,Okada Yoshinori +1 more
TL;DR: In this article, a method of manufacturing a semiconductor device which is capable of forming a gate structure having dimensions as designed is provided, and a photoresist is applied, and is then exposed to light using a photomask (18) for defining the ends of gate structures as seen in a direction of a gate width.
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TL;DR: In this article, an asymmetric channel doping profile was proposed for MOSFETs with a delayed threshold voltage roll-off and short channel effects, making the semiconductor devices more tolerant of gate variations for short gate length devices.
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Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion
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Semiconductor component and method of manufacture
TL;DR: In this article, an insulated gate field effect semiconductor component (100) having a source-side halo region (120) and a method for manufacturing the semiconductor components (100).
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Method for manufacturing a semiconductor component having an early halo implant
TL;DR: In this article, an insulated gate field effect semiconductor component having a source-side halo region and a method for manufacturing the semiconductor components is presented, where a gate structure is formed on a semiconductor substrate, and spacers are formed adjacent opposing sides of the gate structure.