Patent
Tunnel injection of minority carriers in semi-conductors
TLDR
In this article, a multi-layer thin-film device with adjacent insulator-semiconductor layers employing n-orp-type semiconductors is described, where a charge maintained at the insulator/semiconductors interface creates a depletion region that substantially suppresses tunneling of majority carriers while enhancing tunneling tunneling for minority carriers.Abstract:
Disclosed are multi-layer thin-film devices having adjacent insulator-semiconductor layers employing n-or-p-type semiconductors wherein a charge maintained at the insulator-semiconductor interface creates a depletion region that substantially suppresses tunneling of majority carriers while enhancing tunneling of minority carriers. When employed in a metal-insulator semiconductor (MIS) device wherein the semiconductor is a compound such as gallium arsenide (GaAs) or Cadmium Sulfide (CdS), such minority carrier injection substantially increases the luminescence efficiency.read more
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Patent
Non-linear device for driving liquid crystal display
TL;DR: In this paper, a non-linear device used for driving a liquid crystal display is described, which consists of a first amorphous silicon layer, an insulator film deposited on the first silicon layer and a second amorphized silicon layer deposited on said insulator layer.
Patent
Devices with crack stops
Van Mieczkowski,Daniel Namishia +1 more
TL;DR: In this article, an apparatus that comprises a device on a substrate and a crack stop in the substrate is described. And the methods of forming a device are also disclosed, such as providing a device such as a semiconductor device, on the substrate having a first thickness and reducing the thickness of the substrate to a second thickness.
Patent
HGCDTE S-I-S two color infrared detector
TL;DR: In this paper, a two color infrared detector with a simple integrating MIS device with respect to one semiconductor is presented. But the structure can be grown by MBE techniques and does not require any significant additional steps with regard to fabrication.
Patent
Electron emitting apparatus, manufacturing method therefor and method of operating electron emitting apparatus
TL;DR: In this paper, an electron emitting apparatus with excellent mechanical strength and capable of satisfactorily emitting electrons even if a high electric field is applied and a manufacturing method therefor are disclosed.
Patent
Light sensitive detector
TL;DR: In this article, the authors proposed a tunnel diode having a generally rectangular junction area in the 10 -10 to 10 -11 cm 2 range formed in a quasi-planar structure of a first metal, an oxide of the first metal and a second metal.
References
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Patent
PLANAR GaN ELECTROLUMINESCENT DEVICE
TL;DR: A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.