Proceedings ArticleDOI
Two beam coupling in semi-insulating GaN using electroabsorption effect
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TLDR
In this paper, the photorefractive effect was observed in Heion-implanted semi-insulating GaN film in UV spectral region and two beam coupling experiments were performed at a wavelength of 363.8 nm.Abstract:
The photorefractive effect was observed in He-ion-implanted semi-insulating GaN film in UV spectral region. The photorefractive grating is induced by the electroabsorption effect near the band-edge. Two beam coupling experiments were performed at a wavelength of 363.8 nm. The experimental results indicate that absorption grating mainly contributes to the beam coupling effect.read more
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Journal ArticleDOI
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
Journal ArticleDOI
Beam coupling in undoped GaAs at 1.06 microm using the photorefractive effect.
TL;DR: It is observed that beam coupling and degenerate four-wave mixing in high-resistivity, undoped GaAs at 1.06 microm that is due to the photorefractive effect.
Journal ArticleDOI
Four‐wave mixing in semi‐insulating InP and GaAs using the photorefractive effect
TL;DR: In this paper, the photorefractive effect has been observed for the first time in semi-insulating InPe:Fe and GaAsCr. These materials are sensitive and versatile recording media for high bit rate parallel optical processing in the 0.8-1.8μm spectral region using injection lasers of milliwatt power levels.
Journal ArticleDOI
Photorefractive quantum wells: Transverse Franz-Keldysh geometry
TL;DR: In this paper, the photorefractive properties of semi-insulating AlGaAs-GaAs multiple quantum wells are described for the transverse Franz-Keldysh geometry with the electric field in the plane of the quantum wells.
Journal ArticleDOI
Photorefractive properties of doped cadmium telluride
TL;DR: In this article, the photorefractive properties of doped CdTe have been investigated for optical processing applications, and it has been shown that the effect of doping with V and Ti impurities is negligible.