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Undercut-free blm process for pb-free and pb-reduced c4

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TLDR
In this paper, a system and method for eliminating undercut when forming a C4 solder bump for BLM (Ball Limiting Metallurgy) and improving the C4 pitch is presented.
Abstract
A system and method for eliminating undercut when forming a C4 solder bump for BLM (Ball Limiting Metallurgy) and improving the C4 pitch. In the process, a barrier layer metal stack is deposited above a metal pad layer. A top layer of the barrier layer metals (e.g., Cu) is patterned by CMP with a bottom conductive layer of the barrier metal stack removed by etching. The diffusion barrier and C4 solder bump may be formed by electroless plating, in one embodiment, using a maskless technique, or by an electroplating techniques using a patterned mask. This allows the pitch of the C4 solder bumps to be reduced.

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Citations
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References
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Method of forming conductive bumps on die for flip chip applications

TL;DR: In this paper, an improved method for forming UBM pads and bump connections for flip chip was proposed, which eliminates at least one mask step required in standard UBM pad forming processes.
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TL;DR: In this paper, a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer was proposed, which resists Sn migration toward the upper metallization of the device.
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TL;DR: In this paper, the improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layers, a solder bonding layer above the CrCu layer and a solder top layer.