Patent
Semiconductor Device and Method of Fabricating the Same
Jung-Hwan Kim,Hun-Hyeoung Leam,Tae-hyun Kim,Seok-Woo Nam,Hyun Namkoong,Yong-Seok Kim,Tea-kwang Yu +6 more
TLDR
In this paper, the conductive structure is formed over at least part of the planar portion and not over the protrusion portion of the via structure of a semiconductor device.Abstract:
A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.read more
Citations
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Semiconductor device, and manufacturing method thereof
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TL;DR: Stress enhanced transistor devices and methods of fabricating the same are provided in this article. But in this paper, we focus on the use of dielectric spacers instead of a gate conductor.
References
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Journal ArticleDOI
1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS
TL;DR: In this article, a multithreshold-voltage CMOS (MTCMOS) based low-power digital circuit with 0.1-V power supply high-speed low power digital circuit technology was proposed, which has brought about logic gate characteristics of a 1.7ns propagation delay time and 0.3/spl mu/W/MHz/gate power dissipation with a standard load.
Patent
Indium oxide-based thin film transistors and circuits
TL;DR: In this paper, thin-film transistors and circuits with indium oxide-based channel layers are presented for the fabrication of flexible and transparent substrates for electronic display and imaging applications.
Patent
Highly compact EPROM and flash EEPROM devices
TL;DR: In this article, an intelligent erase algorithm is used to prolong the useful life of the memory cells, which is useful as a solid state memory in place of magnetic disk storage devices in computer systems.