Universal Crossover between Efros-Shklovskii and Mott Variable-Range-Hopping Regimes.
Yigal Meir,Yigal Meir +1 more
Reads0
Chats0
TLDR
A universal scaling function, describing the crossover between the Mott and the Efros-Shklovskii hopping regimes, is derived, using the percolation picture of transport in strongly localized systems.Abstract:
A universal scaling function, describing the crossover between the Mott and the Efros-Shklovskii hopping regimes, is derived, using the percolation picture of transport in strongly localized systems. This function is agrees very well with experimental data. Quantitative comparison with experiment allows for the possible determination of the role played by polarons in the transport.read more
Citations
More filters
Journal ArticleDOI
Metal-insulator transition and superconductivity in boron-doped diamond
Thierry Klein,Thierry Klein,Philipp Achatz,J. Kačmarčik,J. Kačmarčik,Christophe Marcenat,Frederik Gustafsson,Jacques Marcus,Etienne Bustarret,Julien Pernot,Franck Omnès,Bo E. Sernelius,Clas Persson,A. Ferreira Sa Silva,C. Cytermann +14 more
TL;DR: In this article, a detailed analysis of the transport properties and superconducting critical temperatures of boron-doped diamond films grown along the {100} direction is presented.
Journal ArticleDOI
Variable-range-hopping conduction processes in oxygen deficient polycrystalline ZnO films
TL;DR: In this paper, the electrical resistivities have been measured over a wide range of temperature from 300 K down to liquid-helium temperatures, and it was shown that below about 100 K, the variable-range-hopping (VRH) conduction processes govern the charge transport properties.
Journal ArticleDOI
Coil-in-coil carbon nanocoils: 11 gram-scale synthesis, single nanocoil electrical properties, and electrical contact improvement.
TL;DR: This study showed that the selective focused laser annealing technique is an effective route to improve the electrical contacts to the nanodevice of coil-in-coil carbon nanocoils.
Journal ArticleDOI
Amorphous organic molecule/polymer diodes and transistors—Comparison between predictions based on Gaussian or exponential density of states
Nir Tessler,Yohai Roichman +1 more
TL;DR: In this paper, the role of the density of states in determining the performance of amorphous organic devices was examined, and the authors concluded that a real DOS should have the attributes found in Gaussian density-of-states.
Journal ArticleDOI
A useful Mott - Efros - Shklovskii resistivity crossover formulation for three-dimensional films
TL;DR: In this article, a simple 3D crossover expression for the resistance versus temperature behavior in highly insulating 3D films is presented, which extrapolates to the Mott variable-range hopping law at high temperatures, and at low temperatures to the Efros - Shklovskii variable range hopping law.
References
More filters
Related Papers (5)
Coulomb gap and low temperature conductivity of disordered systems
A. L. Efros,Boris I Shklovskii +1 more
Direct Observation of the Coulomb Correlation Gap in a Nonmetallic Semiconductor, Si:B.
J. G. Massey,Mark Lee +1 more