Journal ArticleDOI
Coulomb gap and low temperature conductivity of disordered systems
A. L. Efros,Boris I Shklovskii +1 more
TLDR
In this paper, the Coulomb interaction between localized electrons is shown to create a soft gap in the density of states near the Fermi level, and the form of the density within the gap is discussed.Abstract:
The Coulomb interaction between localized electrons is shown to create a 'soft' gap in the density of states near the Fermi level. The new temperature dependence of the hopping DC conductivity is the most important manifestation of the gap. The form of the density of states within the gap is discussed.read more
Citations
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Spin glasses: Experimental facts, theoretical concepts, and open questions
Kurt Binder,A. P. Young +1 more
TL;DR: In this article, the most characteristic properties of spin glass systems are described, and related phenomena in other glassy systems (dielectric and orientational glasses) are mentioned, and a review summarizes recent developments in the theory of spin glasses, as well as pertinent experimental data.
Journal ArticleDOI
Graphene based materials: Past, present and future
TL;DR: Graphene and its derivatives are being studied in nearly every field of science and engineering as mentioned in this paper, and recent progress has shown that the graphene-based materials can have a profound impact on electronic and optoelectronic devices, chemical sensors, nanocomposites and energy storage.
Journal ArticleDOI
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
Book
Metal-insulator transitions
TL;DR: In this article, a discussion is given of some aspects of the metal insulator transition and the status of the "minimum metallic conductivity" is discussed, and the concept is valid for liquids and in some, but not all, solid systems.
Journal ArticleDOI
A.c. conduction in amorphous chalcogenide and pnictide semiconductors
TL;DR: In this article, a comprehensive survey is given of the experimental a.c. data for two types of amorphous semiconductor, namely chalcogenide and pnictide materials, and it is concluded that the behavior at intermediate to high temperatures is well accounted for by the correlated-barrier-hopping model, whereas the low-temperature behaviour is probably due to atomic tunnelling.
References
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Journal ArticleDOI
Hopping Conductivity in Disordered Systems
TL;DR: In this paper, the authors considered a model in which charge is transported via phonon-induced tunneling of electrons between localized states which are randomly distributed in energy and position, and obtained an electrical conductivity of the form
Journal ArticleDOI
Effect of carrier-carrier interactions on some transport properties in disordered semiconductors
TL;DR: In this article, a working classification of these interactions into intra-site interactions, inter-site interaction and polarization is made, where the authors consider the transport properties of disordered semiconductors, particularly where these properties depend on electrons in localized states.
Journal ArticleDOI
Thickness Dependence of Hopping Transport in Amorphous-Ge Films
TL;DR: In this paper, the conductivity of gas-free thin films of amorphous germanium was measured as a function of temperature and film thickness, and the results were consistent with experiment, indicating that hopping conduction near the Fermi energy is the mechanism responsible for conductivity below room temperature.
Journal ArticleDOI
Statistical mechanics of charged traps in an amorphous semiconductor
TL;DR: In this article, the effect of Coulomb interaction between charged traps in an amorphous semiconductor is investigated within the premises of the Mott-Cohen-Fritzsche-Ovshinsky model.